High mobility flexible graphene field-effect transistors with self-healing gate dielectrics

ACS Nano

Volumn 6, Issue 5, 2012, Pages 4469-4474

  Lu, Chun Chieh ^a   Lin, Yung Chang ^a   Yeh, Chao Hui ^a   Huang, Ju Chun ^a   Chiu, Po Wen ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Chemical vapor deposition; Field effect transistor; Flexible electronics; Graphene; Self alignment

Indexed keywords

ACCESS RESISTANCE; ALUMINUM OXIDES; DEVICE PERFORMANCE; ELECTRICAL BREAKDOWN; FLEXIBLE PLASTIC SUBSTRATES; HIGH CURRENTS; HIGH MOBILITY; LOW-VOLTAGE; MECHANICAL BENDING; ON/OFF RATIO; OPERATION VOLTAGE; SELF ALIGNMENT; SELF-ALIGNED; SELF-ALIGNED DEVICES; SELF-HEALING;

ALIGNMENT; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; FLEXIBLE ELECTRONICS; GRAPHENE; OXIDES;

GATE DIELECTRICS;

EID: 84864658047     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn301199j     Document Type: Article

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