Graphene field-effect transistors for radio-frequency flexible electronics

IEEE Journal of the Electron Devices Society

Volumn 3, Issue 1, 2015, Pages 44-48

  Petrone, Nicholas ^a   Meric, Inanc ^a,b   Chari, Tarun ^a   Shepard, Kenneth L ^a   Hone, James ^a  

^a Mechanical Engineering Department Columbia University ^*  (United States)

^b INTEL CORPORATION   (United States)

Author keywords

chemical vapor deposition (CVD); FET; flexible electronics; graphene; radio frequency (RF)

Indexed keywords

AMPLIFICATION; CHEMICAL VAPOR DEPOSITION; ELECTRONIC PROPERTIES; FLEXIBLE ELECTRONICS; GRAPHENE; RADIO WAVES; TRANSISTORS;

CHEMICAL VAPOR DEPOSITIONS (CVD); FET; FLEXIBLE SUBSTRATE; FLEXIBLE TECHNOLOGIES; GHZ FREQUENCIES; GRAPHENE FIELD-EFFECT TRANSISTORS; II-IV SEMICONDUCTORS; RADIO FREQUENCIES;

FIELD EFFECT TRANSISTORS;

EID: 84919785228     PISSN: None     EISSN: 21686734     Source Type: Journal    
DOI: 10.1109/JEDS.2014.2363789     Document Type: Article

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