Controlling the functionalizations of hexagonal boron nitride structures by carrier doping

Journal of Physical Chemistry Letters

Volumn 2, Issue 17, 2011, Pages 2168-2173

  Zhang, Zhuhua ^a   Guo, Wanlin ^a  

^a NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

Author keywords

Catalysis; Interfaces; Surfaces

Indexed keywords

B ATOMS; BOND STABILITY; CARRIER DOPING; ELECTRON-DOPED; FUNCTIONALIZATIONS; FUNCTIONALIZED; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); HOLE-DOPING; PHYSICAL CONDITIONS;

ADATOMS; BORON; BORON NITRIDE; CHEMICAL BONDS; DENSITY FUNCTIONAL THEORY; NITRIDES;

CARRIER CONCENTRATION;

EID: 80052389732     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz2009506     Document Type: Article

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