25 GHz embedded-gate graphene transistors with high-K dielectrics on extremely flexible plastic sheets

ACS Nano

Volumn 7, Issue 9, 2013, Pages 7744-7750

  Lee, Jongho ^a   Ha, Tae Jun ^a   Li, Huifeng ^b   Parrish, Kristen N ^a   Holt, Milo ^a   Dodabalapur, Ananth ^a   Ruoff, Rodney S ^b   Akinwande, Deji ^a  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

CVD graphene; field effect transistors; flexible electronics; mobility; RF and analog device; transit frequency; water resistant

Indexed keywords

ANALOG DEVICES; CVD GRAPHENE; ELECTRICAL AND MECHANICAL PROPERTIES; FLEXIBLE ELECTRONIC SYSTEMS; FLEXIBLE POLYIMIDE SUBSTRATE; GRAPHENE FIELD-EFFECT TRANSISTORS; TRANSIT FREQUENCY; WATER-RESISTANT;

CARRIER MOBILITY; CUTOFF FREQUENCY; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; FLEXIBLE ELECTRONICS; FLUORINE CONTAINING POLYMERS; GATE DIELECTRICS; MECHANICAL PROPERTIES; PLASTIC SHEETS; POLYIMIDES; PROTECTIVE COATINGS; SUBSTRATES; VAPORS;

GRAPHENE;

EID: 84884947828     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn403487y     Document Type: Article

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