SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 100, Issue 15, 2012, Pages

Embedded-gate graphene transistors for high-mobility detachable flexible nanoelectronics

(5) Lee, Jongho a Tao, Li a Hao, Yufeng b Ruoff, Rodney S b Akinwande, Deji a

a The University of Texas at Austin (United States)

b UNIVERSITY OF TEXAS AT AUSTIN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED IMPURITY; ELECTROSTATIC TRANSPORT; GRAPHENE TRANSISTORS; HIGH MOBILITY; HIGH-SPEED DEVICES; INTRINSIC MECHANISMS; POLYIMIDE FILM; POLYMERIC SUBSTRATE; TEMPERATURE-DEPENDENT MEASUREMENTS;

CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; POLYIMIDES; POLYMERIC FILMS; SURFACE ROUGHNESS;

GRAPHENE;

EID: 84859798281 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3702570 Document Type: Article

Times cited : (65)

References (29)

1
- 77955231284
- 10.1038/nnano.2010.89
- F. Schwierz, Nat. Nanotechnol. 5 (7), 487 (2010). 10.1038/nnano.2010.89
- (2010) Nat. Nanotechnol. , vol.5 , Issue.7 , pp. 487
- Schwierz, F.¹

2
- 79959518735
- 10.1063/1.3579997
- N. Tombros, A. Veligura, J. Junesch, J. Jasper van den Berg, P. J. Zomer, M. Wojtaszek, I. J. Vera Marun, H. T. Jonkman, and B. J. van Wees, J. Appl. Phys. 109 (9), 093702 (2011). 10.1063/1.3579997
- (2011) J. Appl. Phys. , vol.109 , Issue.9 , pp. 093702
- Tombros, N.¹ Veligura, A.² Junesch, J.³ Jasper Van Den Berg, J.⁴ Zomer, P.J.⁵ Wojtaszek, M.⁶ Vera Marun, I.J.⁷ Jonkman, H.T.⁸ Van Wees, B.J.⁹

3
- 84869153073
- (DRC, Santa Barbara, CA)
- B. Fallahazad, K. Lee, S. Kim, C. Corbet, and E. Tutuc, in 69th Annual Device Research Conference (DRC, Santa Barbara, CA, 2011), p. 35.
- (2011) 69th Annual Device Research Conference , pp. 35
- Fallahazad, B.¹ Lee, K.² Kim, S.³ Corbet, C.⁴ Tutuc, E.⁵

4
- 41849125958
- 10.1038/nnano.2008.58
- J.-H. Chen, C. Jang, S. Xiao, M. Ishigami, and M. S. Fuhrer, Nat. Nanotechnol. 3 (4), 206 (2008). 10.1038/nnano.2008.58
- (2008) Nat. Nanotechnol. , vol.3 , Issue.4 , pp. 206
- Chen, J.-H.¹ Jang, C.² Xiao, S.³ Ishigami, M.⁴ Fuhrer, M.S.⁵

5
- 77955759220
- 10.1103/PhysRevB.81.195442
- V. Perebeinos and P. Avouris, Phys. Rev. B 81 (19), 195442 (2010). 10.1103/PhysRevB.81.195442
- (2010) Phys. Rev. B , vol.81 , Issue.19 , pp. 195442
- Perebeinos, V.¹ Avouris, P.²

6
- 43949143884
- 10.1103/PhysRevB.77.195415
- S. Fratini and F. Guinea, Phys. Rev. B 77 (19), 195415 (2008). 10.1103/PhysRevB.77.195415
- (2008) Phys. Rev. B , vol.77 , Issue.19 , pp. 195415
- Fratini, S.¹ Guinea, F.²

7
- 80053561714
- 10.1109/LED.2011.2163489
- O. M. Nayfeh, IEEE Electron Device Lett. 32 (10), 1349 (2011). 10.1109/LED.2011.2163489
- (2011) IEEE Electron Device Lett. , vol.32 , Issue.10 , pp. 1349
- Nayfeh, O.M.¹

8
- 36249009846
- 10.1002/adma.200701059
- J.-H. Chen, M. Ishigami, C. Jang, D. R. Hines, M. S. Fuhrer, and E. D. Williams, Adv. Mater. 19 (21), 3623 (2007). 10.1002/adma.200701059
- (2007) Adv. Mater. , vol.19 , Issue.21 , pp. 3623
- Chen, J.-H.¹ Ishigami, M.² Jang, C.³ Hines, D.R.⁴ Fuhrer, M.S.⁵ Williams, E.D.⁶

9
- 66749119012
- 10.1126/science.1171245
- X. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S. K. Banerjee, L. Colombo, and R. S. Ruoff, Science 324 (5932), 1312 (2009). 10.1126/science.1171245
- (2009) Science , vol.324 , Issue.5932 , pp. 1312
- Li, X.¹ Cai, W.² An, J.³ Kim, S.⁴ Nah, J.⁵ Yang, D.⁶ Piner, R.⁷ Velamakanni, A.⁸ Jung, I.⁹ Tutuc, E.¹⁰ Banerjee, S.K.¹¹ Colombo, L.¹² Ruoff, R.S.¹³

10
- 78650896745
- 10.1109/LED.2010.2084559
- C.-Y. Wei, S.-H. Kuo, Y.-M. Hung, W.-C. Huang, F. Adriyanto, and Y.-H. Wang, IEEE Electron Device Lett. 32 (1), 90 (2011). 10.1109/LED.2010.2084559
- (2011) IEEE Electron Device Lett. , vol.32 , Issue.1 , pp. 90
- Wei, C.-Y.¹ Kuo, S.-H.² Hung, Y.-M.³ Huang, W.-C.⁴ Adriyanto, F.⁵ Wang, Y.-H.⁶

11
- 17044368327
- 10.1063/1.1854721
- E. S. Snow, P. M. Campbell, M. G. Ancona, and J. P. Novak, Appl. Phys. Lett. 86 (3), 033105 (2005). 10.1063/1.1854721
- (2005) Appl. Phys. Lett. , vol.86 , Issue.3 , pp. 033105
- Snow, E.S.¹ Campbell, P.M.² Ancona, M.G.³ Novak, J.P.⁴

12
- 71949115543
- 10.1021/nl902623y
- X. Li, Y. Zhu, W. Cai, M. Borysiak, B. Han, D. Chen, R. D. Piner, L. Colombo, and R. S. Ruoff, Nano Lett. 9 (12), 4359 (2009). 10.1021/nl902623y
- (2009) Nano Lett. , vol.9 , Issue.12 , pp. 4359
- Li, X.¹ Zhu, Y.² Cai, W.³ Borysiak, M.⁴ Han, B.⁵ Chen, D.⁶ Piner, R.D.⁷ Colombo, L.⁸ Ruoff, R.S.⁹

13
- 84255168507
- 10.1116/1.3662081
- L. Tao, J. Lee, and D. Akinwande, J. Vac. Sci. Technol. B 29 (6), 06FG07 (2011). 10.1116/1.3662081
- (2011) J. Vac. Sci. Technol. B , vol.29 , Issue.6
- Tao, L.¹ Lee, J.² Akinwande, D.³

14
- 80053389766
- 10.1063/1.3643444
- A. Pirkle, J. Chan, A. Venugopal, D. Hinojos, C. W. Magnuson, S. McDonnell, L. Colombo, E. M. Vogel, R. S. Ruoff, and R. M. Wallace, Appl. Phys. Lett. 99 (12), 122108 (2011). 10.1063/1.3643444
- (2011) Appl. Phys. Lett. , vol.99 , Issue.12 , pp. 122108
- Pirkle, A.¹ Chan, J.² Venugopal, A.³ Hinojos, D.⁴ Magnuson, C.W.⁵ McDonnell, S.⁶ Colombo, L.⁷ Vogel, E.M.⁸ Ruoff, R.S.⁹ Wallace, R.M.¹⁰

15
- 81855218266
- 10.1021/nn203377t
- X. Liang, B. A. Sperling, I. Calizo, G. Cheng, C. A. Hacker, Q. Zhang, Y. Obeng, K. Yan, H. Peng, Q. Li, X. Zhu, H. Yuan, A. R. Hight Walker, Z. Liu, L.-M. Peng, and C. A. Richter, ACS Nano 5 (11), 9144 (2011). 10.1021/nn203377t
- (2011) ACS Nano , vol.5 , Issue.11 , pp. 9144
- Liang, X.¹ Sperling, B.A.² Calizo, I.³ Cheng, G.⁴ Hacker, C.A.⁵ Zhang, Q.⁶ Obeng, Y.⁷ Yan, K.⁸ Peng, H.⁹ Li, Q.¹⁰ Zhu, X.¹¹ Yuan, H.¹² Hight Walker, A.R.¹³ Liu, Z.¹⁴ Peng, L.-M.¹⁵ Richter, C.A.¹⁶

16
- 48249135493
- 10.1103/PhysRevLett.101.026803
- G. Giovannetti, P. Khomyakov, G. Brocks, V. M. Karpan, J. van den Brink, and P. Kelly, Phys. Rev. Lett. 101 (2), 026803 (2008). 10.1103/PhysRevLett.101. 026803
- (2008) Phys. Rev. Lett. , vol.101 , Issue.2 , pp. 026803
- Giovannetti, G.¹ Khomyakov, P.² Brocks, G.³ Karpan, V.M.⁴ Van Den Brink, J.⁵ Kelly, P.⁶

17
- 60349109113
- 10.1063/1.3077021
- S. Kim, J. Nah, I. Jo, D. Shahrjerdi, L. Colombo, Z. Yao, E. Tutuc, and S. K. Banerjee, Appl. Phys. Lett. 94 (6), 062107 (2009). 10.1063/1.3077021
- (2009) Appl. Phys. Lett. , vol.94 , Issue.6 , pp. 062107
- Kim, S.¹ Nah, J.² Jo, I.³ Shahrjerdi, D.⁴ Colombo, L.⁵ Yao, Z.⁶ Tutuc, E.⁷ Banerjee, S.K.⁸

18
- 77956434425
- 10.1021/nl101559n
- B. J. Kim, H. Jang, S.-K. Lee, B. H. Hong, J.-H. Ahn, and J. H. Cho, Nano Lett. 10 (9), 3464 (2010). 10.1021/nl101559n
- (2010) Nano Lett. , vol.10 , Issue.9 , pp. 3464
- Kim, B.J.¹ Jang, H.² Lee, S.-K.³ Hong, B.H.⁴ Ahn, J.-H.⁵ Cho, J.H.⁶

19
- 79958861716
- 10.1063/1.3592338
- A. Venugopal, J. Chan, X. Li, C. W. Magnuson, W. P. Kirk, L. Colombo, R. S. Ruoff, and E. M. Vogel, J. Appl. Phys. 109 (10), 104511 (2011). 10.1063/1.3592338
- (2011) J. Appl. Phys. , vol.109 , Issue.10 , pp. 104511
- Venugopal, A.¹ Chan, J.² Li, X.³ Magnuson, C.W.⁴ Kirk, W.P.⁵ Colombo, L.⁶ Ruoff, R.S.⁷ Vogel, E.M.⁸

20
- 80053315534
- 10.1021/nn202012m
- M. E. Ramn, A. Gupta, C. Corbet, D. A. Ferrer, H. C. P. Movva, G. Carpenter, L. Colombo, G. Bourianoff, M. Doczy, D. Akinwande, E. Tutuc, and S. K. Banerjee, ACS Nano 5 (9), 7198 (2011). 10.1021/nn202012m
- (2011) ACS Nano , vol.5 , Issue.9 , pp. 7198
- Ramn, M.E.¹ Gupta, A.² Corbet, C.³ Ferrer, D.A.⁴ Movva, H.C.P.⁵ Carpenter, G.⁶ Colombo, L.⁷ Bourianoff, G.⁸ Doczy, M.⁹ Akinwande, D.¹⁰ Tutuc, E.¹¹ Banerjee, S.K.¹²

21
- 84880720520
- (DRC, Santa Barbara, CA)
- J. Heo, H.-J. Chung, S.-H. Lee, H. Yang, J. Shin, U.-I. Chung, and S. Seo, in 69th Annual Device Research Conference (DRC, Santa Barbara, CA, 2011), p. 31.
- (2011) 69th Annual Device Research Conference , pp. 31
- Heo, J.¹ Chung, H.-J.² Lee, S.-H.³ Yang, H.⁴ Shin, J.⁵ Chung, U.-I.⁶ Seo, S.⁷

22
- 79957480293
- (Cambridge University Press)
- H.-S. P. Wong and D. Akinwande, Carbon Nanotube and Graphene Device Physics (Cambridge University Press, 2011).
- (2011) Carbon Nanotube and Graphene Device Physics
- Wong, H.-S.P.¹ Akinwande, D.²

23
- 33847306075
- 10.1143/JPSJ.75.074716
- T. Ando, J. Phys. Soc. Jpn. 75 (7), 074716 (2006). 10.1143/JPSJ.75.074716
- (2006) J. Phys. Soc. Jpn. , vol.75 , Issue.7 , pp. 074716
- Ando, T.¹

24
- 0026899752
- 10.1016/0038-1101(92)90326-8
- D. B. M. Klaassen, Solid-State Electron. 35 (7), 961 (1992). 10.1016/0038-1101(92)90326-8
- (1992) Solid-State Electron. , vol.35 , Issue.7 , pp. 961
- Klaassen, D.B.M.¹

25
- 0036712369
- 10.1088/0268-1242/17/9/313
- T. T. Mnatsakanov, M. E. Levinshtein, L. I. Pomortseva, and S. N. Yurkov, Semicond. Sci. Technol. 17 (9), 974 (2002). 10.1088/0268-1242/17/9/313
- (2002) Semicond. Sci. Technol. , vol.17 , Issue.9 , pp. 974
- Mnatsakanov, T.T.¹ Levinshtein, M.E.² Pomortseva, L.I.³ Yurkov, S.N.⁴

26
- 51749110481
- 10.1103/PhysRevB.78.121402
- B. Huard, N. Stander, J. A. Sulpizio, and D. Goldhaber-Gordon, Phys. Rev. B 78 (12), 121402 (2008). 10.1103/PhysRevB.78.121402
- (2008) Phys. Rev. B , vol.78 , Issue.12 , pp. 121402
- Huard, B.¹ Stander, N.² Sulpizio, J.A.³ Goldhaber-Gordon, D.⁴

27
- 85009818955
- (IEDM, Baltimore, MD)
- K. Nagashio, T. Nishimura, K. Kita, and A. Tori, in IEEE International Electron Devices Meeting (IEDM, Baltimore, MD, 2009), p. 1.
- (2009) IEEE International Electron Devices Meeting , pp. 1
- Nagashio, K.¹ Nishimura, T.² Kita, K.³ Tori, A.⁴

28
- 79952445612
- 10.1038/nnano.2011.6
- F. Xia, V. Perebeinos, Y.-M. Lin, Y. Wu, and P. Avouris, Nat. Nanotechnol. 6 (3), 179 (2011). 10.1038/nnano.2011.6
- (2011) Nat. Nanotechnol. , vol.6 , Issue.3 , pp. 179
- Xia, F.¹ Perebeinos, V.² Lin, Y.-M.³ Wu, Y.⁴ Avouris, P.⁵

29
- 0001062092
- 10.1016/0038-1101(66)90097-9
- F. A. Padovani and R. Stratton, Solid-State Electron. 9 (7), 695 (1966). 10.1016/0038-1101(66)90097-9
- (1966) Solid-State Electron. , vol.9 , Issue.7 , pp. 695
- Padovani, F.A.¹ Stratton, R.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.