Low temperature solid-state-diffusion bonding for fine-pitch Cu/Sn/Cu interconnect

Proceedings - Electronic Components and Technology Conference

Volumn 2015-July, Issue , 2015, Pages 1616-1623

  Cai, Jian ^a,b   Wang, Junqiang ^c   Wang, Qian ^a   Liu, Ziyu ^a   Wang, Dejun ^c   Seo, Sun Kyoung ^d   Cho, Tae Je ^d  

^a TSINGHUA UNIVERSITY   (China)

^b TSINGHUA NATIONAL LABORATORY FOR INFORMATION SCIENCE AND TECHNOLOGY   (China)

^c DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^d Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

fine pitch interconnect; Kirkendall voids; microstructure; solid state diffusion bonding

Indexed keywords

BINARY ALLOYS; COPPER ALLOYS; DIFFUSION BONDING; DIFFUSION IN SOLIDS; INTEGRATED CIRCUIT INTERCONNECTS; MICROSTRUCTURE; NETWORK COMPONENTS; TEMPERATURE; TIN; TIN ALLOYS;

AFTER HIGH TEMPERATURE; ELECTRICAL RESISTANCES; FINE PITCH; INTERFACIAL MICROSTRUCTURE; KIRKENDALL VOID; REDISTRIBUTION LAYERS; SOLID-STATE DIFFUSION; SURFACE ACTIVATION;

WAFER BONDING;

EID: 84942115746     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2015.7159813     Document Type: Conference Paper

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