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Volumn 39, Issue 11, 2010, Pages 2368-2374

Interfacial reaction effect on electrical reliability of Cu Pillar/Sn bumps

(7) Jeong, Myeong Hyeok a Lim, Gi Tae a Kim, Byoung Joon b Lee, Ki Wook c Kim, Jae Dong c Joo, Young Chang b Park, Young Bae a

a Andong National University (South Korea)

b Seoul National University (South Korea)

c Amkor Technology Korea Inc (South Korea)

Author keywords

Cu pillar Sn bump; Electrical reliability; Electromigration; Growth kinetics; Intermetallic compound

Indexed keywords

ANNEALING TESTS; CU PILLAR; CU PILLAR/SN BUMP; CURRENT-STRESSING; ELECTRICAL FAILURES; ELECTRICAL RELIABILITY; ELECTRICAL RESISTANCES; GROWTH MECHANISMS; INTERCONNECT SYSTEMS; INTERFACIAL REACTIONS; INTERMETALLIC COMPOUND; INTERMETALLIC COMPOUNDS; SOLDER BUMP; THERMAL-ANNEALING;

ANNEALING; ELECTROMIGRATION; GROWTH KINETICS; IMPACT RESISTANCE; INTERMETALLICS; PHASE TRANSITIONS; RELIABILITY; SOLDERING; SOLDERING ALLOYS; TESTING;

TIN;

EID: 78149281387 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-010-1345-7 Document Type: Article

Times cited : (22)

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