High-density large-area-array interconnects formed by low-temperature cu/sn-cu bonding for three-dimensional integrated circuits

IEEE Transactions on Electron Devices

Volumn 59, Issue 7, 2012, Pages 1941-1947

  Lueck, Matthew R ^a   Reed, Jason D ^b   Gregory, Christopher W ^a   Huffman, Alan ^a   Lannon Jr , John M ^a   Temple, Dorota S ^a  

^a RTI INTERNATIONAL   (United States)

^b Phononic Devices   (United States)

Author keywords

3 D integration; Cu Sn Cu interconnects; high density interconnect bonding; solid liquid diffusion bonding

Indexed keywords

3-D INTEGRATED CIRCUIT; 3-D INTEGRATION; 3-D INTERCONNECTS; ALLOY COMPOSITIONS; CMOS WAFERS; ELECTRICAL CONTINUITY; ENABLING TECHNOLOGIES; HIGH YIELD; HIGH-DENSITY; HIGHER TEMPERATURES; LARGE ARRAYS; LONG CHAINS; LOW TEMPERATURES; LOW THERMAL BUDGET; SOLID-LIQUID; THREE DIMENSIONAL INTEGRATED CIRCUITS;

INTEGRATED CIRCUITS; TIN;

THREE DIMENSIONAL;

EID: 84862699901     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2193404     Document Type: Article

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