Graphene-GaN Schottky diodes

Nano Research

Volumn 8, Issue 4, 2015, Pages 1327-1338

  Kim, Seongjun ^a   Seo, Tae Hoon ^b   Kim, Myung Jong ^b   Song, Keun Man ^c   Suh, Eun Kyung ^a   Kim, Hyunsoo ^a  

^a Chonbuk National University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c Korea Advanced Nano Fab Center (KANC)   (South Korea)

Author keywords

Fermi level pinning; GaN; graphene; Schottky barrier height; Schottky diode

Indexed keywords

EID: 84939982475     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-014-0624-7     Document Type: Article

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