Thermionic field emission explanation for nonlinear Richardson plots

IEEE Transactions on Electron Devices

Volumn 58, Issue 8, 2011, Pages 2423-2429

  Kenney, Crystal ^a   Saraswat, Krishna C ^a   Taylor, Bill ^b   Majhi, Prashant ^b  

^a Stanford University   (United States)

^b SEmiconductor MAnufacturing TECHnology   (United States)

Author keywords

Arrhenius plot; diode; Richardson plot; Schottky barrier height (SBH); simulation; theory; thermionic field emission (TFE)

Indexed keywords

RICHARDSON PLOT; SCHOTTKY BARRIER HEIGHT (SBH); SIMULATION; THEORY; THERMIONIC FIELD EMISSION;

ARRHENIUS PLOTS; COMPUTER SIMULATION; FIELD EMISSION; MATHEMATICAL MODELS; SCHOTTKY BARRIER DIODES;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 79960842462     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2156411     Document Type: Article

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