-
1
-
-
77952329312
-
Metal/graphene Contact as a Performance Killer of Ultra-high Mobility Graphene - Analysis of Intrinsic Mobility and Contact Resistance
-
Baltimore, MD, December 7-9
-
Nagashio, K.; Nishimura, T.; Kita, K.; Toriumi, A. Metal/graphene Contact as a Performance Killer of Ultra-high Mobility Graphene-Analysis of Intrinsic Mobility and Contact Resistance. IEEE International Electron Devices Meeting, Baltimore, MD, December 7-9, 2009; pp 565-568.
-
(2009)
IEEE International Electron Devices Meeting
, pp. 565-568
-
-
Nagashio, K.1
Nishimura, T.2
Kita, K.3
Toriumi, A.4
-
2
-
-
65849394132
-
Influence of Metal Contacts and Charge Inhomogeneity on Transport Properties of Graphene Near the Neutrality Point
-
Blake, P.; Yang, R.; Morozov, S. V.; Schedin, F.; Ponomarenko, L. A.; Zhukov, A. A.; Nair, R. R.; Grigorieva, I. V.; Novoselov, K. S.; Geim, A. K. Influence of Metal Contacts and Charge Inhomogeneity on Transport Properties of Graphene Near the Neutrality Point Solid State Commun. 2009, 149, 1068
-
(2009)
Solid State Commun.
, vol.149
, pp. 1068
-
-
Blake, P.1
Yang, R.2
Morozov, S.V.3
Schedin, F.4
Ponomarenko, L.A.5
Zhukov, A.A.6
Nair, R.R.7
Grigorieva, I.V.8
Novoselov, K.S.9
Geim, A.K.10
-
3
-
-
67649221401
-
Breakdown Current Density of Graphene Nanoribbons
-
Murali, R.; Yang, Y.; Brenner, K.; Beck, T.; Meindl, J. D. Breakdown Current Density of Graphene Nanoribbons Appl. Phys. Lett. 2009, 94, 243114
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 243114
-
-
Murali, R.1
Yang, Y.2
Brenner, K.3
Beck, T.4
Meindl, J.D.5
-
4
-
-
76749150089
-
Graphene Field-effect Transistors with High On/off Current Ratio and Large Transport Band Gap at Room Temperature
-
Xia, F.; Farmer, D. B.; Lin, Y.; Avouris, P. Graphene Field-effect Transistors with High On/off Current Ratio and Large Transport Band Gap at Room Temperature Nano Lett. 2010, 10, 715-718
-
(2010)
Nano Lett.
, vol.10
, pp. 715-718
-
-
Xia, F.1
Farmer, D.B.2
Lin, Y.3
Avouris, P.4
-
5
-
-
76949106220
-
Contact Resistance in Graphene-based Devices
-
Russo, S.; Craciun, M. F.; Yamamoto, M.; Morpurgo, A. F.; Tarucha, S. Contact Resistance in Graphene-based Devices Physica E 2010, 42, 677-679
-
(2010)
Physica e
, vol.42
, pp. 677-679
-
-
Russo, S.1
Craciun, M.F.2
Yamamoto, M.3
Morpurgo, A.F.4
Tarucha, S.5
-
6
-
-
75749109747
-
Contact Resistance in Few and Multilayer Graphene Devices
-
Venugopal, A.; Colombo, L.; Vogel, E. M. Contact Resistance in Few and Multilayer Graphene Devices Appl. Phys. Lett. 2010, 96, 013512
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 013512
-
-
Venugopal, A.1
Colombo, L.2
Vogel, E.M.3
-
7
-
-
77955231284
-
Graphene Transistors
-
Schwierz, F. Graphene Transistors Nat. Nanotechnol. 2010, 5, 487-496
-
(2010)
Nat. Nanotechnol.
, vol.5
, pp. 487-496
-
-
Schwierz, F.1
-
8
-
-
77958023479
-
Contact Resistivity and Current Flow Path at Metal/graphene Contact
-
Nagashio, K.; Nishimura, T.; Kita, K.; Toriumi, A. Contact Resistivity and Current Flow Path at Metal/graphene Contact Appl. Phys. Lett. 2010, 97, 143514
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 143514
-
-
Nagashio, K.1
Nishimura, T.2
Kita, K.3
Toriumi, A.4
-
9
-
-
79952445612
-
The Origins and Limits of Metal-graphene Junction Resistance
-
Xia, F.; Perebeinos, V.; Lin, Y.; Wu, Y.; Avouris, Ph. The Origins and Limits of Metal-graphene Junction Resistance Nat. Nanotechnol. 2011, 6, 179-184
-
(2011)
Nat. Nanotechnol.
, vol.6
, pp. 179-184
-
-
Xia, F.1
Perebeinos, V.2
Lin, Y.3
Wu, Y.4
Avouris, Ph.5
-
10
-
-
83555163728
-
Electrical Contacts to One- and Two-dimensional Nanomaterials
-
Léonard, F.; Talin, A. A. Electrical Contacts to One- and Two-dimensional Nanomaterials Nat. Nanotechnol. 2011, 6, 773-783
-
(2011)
Nat. Nanotechnol.
, vol.6
, pp. 773-783
-
-
Léonard, F.1
Talin, A.A.2
-
11
-
-
79960926454
-
Impact of Graphene Interface Quality on Contact Resistance and RF Device Performance
-
Hsu, A.; Wang, H.; Kim, K. K.; Kong, J.; Palacios, T. Impact of Graphene Interface Quality on Contact Resistance and RF Device Performance IEEE Electron Device Lett. 2011, 32, 1008
-
(2011)
IEEE Electron Device Lett.
, vol.32
, pp. 1008
-
-
Hsu, A.1
Wang, H.2
Kim, K.K.3
Kong, J.4
Palacios, T.5
-
12
-
-
80054903454
-
Substrate Gating of Contact Resistance in Graphene Transistors
-
Berdebes, D.; Low, T.; Sui, Y.; Appenzeller, J.; Lundstrom, M. S. Substrate Gating of Contact Resistance in Graphene Transistors IEEE Trans. Electron Devices 2011, 58, 3925
-
(2011)
IEEE Trans. Electron Devices
, vol.58
, pp. 3925
-
-
Berdebes, D.1
Low, T.2
Sui, Y.3
Appenzeller, J.4
Lundstrom, M.S.5
-
13
-
-
84863346247
-
Contact Length Scaling in Graphene Field-effect Transistors
-
Xu, H.; Wang, S.; Zhang, Z.; Wang, Z.; Xu, H.; Peng, L.-M. Contact Length Scaling in Graphene Field-effect Transistors Appl. Phys. Lett. 2012, 100, 103501
-
(2012)
Appl. Phys. Lett.
, vol.100
, pp. 103501
-
-
Xu, H.1
Wang, S.2
Zhang, Z.3
Wang, Z.4
Xu, H.5
Peng, L.-M.6
-
14
-
-
84655161227
-
Double Contacts for Improved Performance of Graphene Transistors
-
Franklin, A. D.; Han, S.-J.; Bol, A. A.; Perebeinos, V. Double Contacts for Improved Performance of Graphene Transistors IEEE Electron. Device Lett. 2012, 33, 17
-
(2012)
IEEE Electron. Device Lett.
, vol.33
, pp. 17
-
-
Franklin, A.D.1
Han, S.-J.2
Bol, A.A.3
Perebeinos, V.4
-
15
-
-
84860428511
-
Atomic-scale Model for the Contact Resistance of the Nickel-graphene Interface
-
10.1103/PhysRevB.85.165442
-
Stokbro, K.; Engelund, M.; Blom, A. Atomic-scale Model for the Contact Resistance of the Nickel-graphene Interface Phys. Rev. B 2012, 10.1103/PhysRevB.85.165442
-
(2012)
Phys. Rev. B
-
-
Stokbro, K.1
Engelund, M.2
Blom, A.3
-
16
-
-
51749110481
-
Evidence of the Role of Contacts on the Observed Electron-hole Asymmetry in Graphene
-
Huard, B.; Stander, N.; Sulpizio, J. A.; Goldhaber-Gordon, D. Evidence of the Role of Contacts on the Observed Electron-hole Asymmetry in Graphene Phys. Rev. B 2008, 78, 121402(R)
-
(2008)
Phys. Rev. B
, vol.78
-
-
Huard, B.1
Stander, N.2
Sulpizio, J.A.3
Goldhaber-Gordon, D.4
-
17
-
-
77955333641
-
Low Operating Bias and Matched Input-output Characteristics in Graphene Logic Inverters
-
Li, S.; Miyazaki, H.; Kumatani, A.; Kanda, A.; Tsukagoshi, K. Low Operating Bias and Matched Input-output Characteristics in Graphene Logic Inverters Nano Lett. 2010, 10, 2357-2362
-
(2010)
Nano Lett.
, vol.10
, pp. 2357-2362
-
-
Li, S.1
Miyazaki, H.2
Kumatani, A.3
Kanda, A.4
Tsukagoshi, K.5
-
18
-
-
0038645647
-
No exponential is forever: But "forever" can be delayed!
-
Digest of Technical Papers, Piscataway, NJ, February 10
-
Moore, G. E. No exponential is forever: but "forever" can be delayed! IEEE International Solid State Circuits Conference 2003, Digest of Technical Papers, Piscataway, NJ, February 10, 2003; pp 20-23.
-
(2003)
IEEE International Solid State Circuits Conference 2003
, pp. 20-23
-
-
Moore, G.E.1
-
19
-
-
83655164347
-
Graphene Gate Electrode for MOS Structure-Based Electronic Devices
-
Park, J. K.; Song, S. M.; Mun, J. H.; Cho, B. J. Graphene Gate Electrode for MOS Structure-Based Electronic Devices Nano Lett. 2011, 11, 5383-5386
-
(2011)
Nano Lett.
, vol.11
, pp. 5383-5386
-
-
Park, J.K.1
Song, S.M.2
Mun, J.H.3
Cho, B.J.4
-
20
-
-
84866559838
-
Dramatic Improvement of High-κ Gate Dielectric Reliability by Replacing Metal Gate Electrode with Mono-Layer Graphene
-
Honolulu, HI, June 12
-
Park, J. K.; Song, S. M.; Mun, J. H.; Cho, B. J. Dramatic Improvement of High-κ Gate Dielectric Reliability by Replacing Metal Gate Electrode with Mono-Layer Graphene. 2012 Symposium on VLSI Technology, Honolulu, HI, June 12, 2012; pp 31-32.
-
(2012)
2012 Symposium on VLSI Technology
, pp. 31-32
-
-
Park, J.K.1
Song, S.M.2
Mun, J.H.3
Cho, B.J.4
-
21
-
-
48249135493
-
Doping Graphene with Metal Contacts
-
Giovannetti, G.; Khomyakov, P. A.; Brocks, G.; Karpan, V. M.; van den Brink, J.; Kelly, P. J. Doping Graphene with Metal Contacts Phys. Rev. Lett. 2008, 101, 026803
-
(2008)
Phys. Rev. Lett.
, vol.101
, pp. 026803
-
-
Giovannetti, G.1
Khomyakov, P.A.2
Brocks, G.3
Karpan, V.M.4
Van Den Brink, J.5
Kelly, P.J.6
-
22
-
-
67649414628
-
First-principles Study of the Interaction and Charge Transfer between Graphene and Metals
-
Khomyakov, P. A.; Giovannetti, G.; Rusu, P. C.; Brocks, G.; van den Brink, J.; Kelly, P. J. First-principles Study of the Interaction and Charge Transfer between Graphene and Metals Phys. Rev. B 2009, 79, 195425
-
(2009)
Phys. Rev. B
, vol.79
, pp. 195425
-
-
Khomyakov, P.A.1
Giovannetti, G.2
Rusu, P.C.3
Brocks, G.4
Van Den Brink, J.5
Kelly, P.J.6
-
23
-
-
72849122590
-
Tuning the Graphene Work Function by Electric Field Effect
-
Yu, Y.; Zhao, Y.; Ryu, S.; Brus, L. E.; Kim, K. S.; Kim, P. Tuning the Graphene Work Function by Electric Field Effect Nano Lett. 2009, 9, 3430-3434
-
(2009)
Nano Lett.
, vol.9
, pp. 3430-3434
-
-
Yu, Y.1
Zhao, Y.2
Ryu, S.3
Brus, L.E.4
Kim, K.S.5
Kim, P.6
-
24
-
-
80052794494
-
Local Voltage Drop in a Single Functionalized Graphene Sheet Characterized by Kelvin Probe Force Microscopy
-
Yan, L.; Punckt, C.; Aksay, I. A.; Mertin, W.; Bacher, G. Local Voltage Drop in a Single Functionalized Graphene Sheet Characterized by Kelvin Probe Force Microscopy Nano Lett. 2011, 11, 3543-3549
-
(2011)
Nano Lett.
, vol.11
, pp. 3543-3549
-
-
Yan, L.1
Punckt, C.2
Aksay, I.A.3
Mertin, W.4
Bacher, G.5
-
25
-
-
49449096174
-
Contact and Edge Effects in Graphene Devices
-
Lee, E. J. H.; Balasubramanian, K.; Weitz, R. T.; Burghard, M.; Kern, K. Contact and Edge Effects in Graphene Devices Nat. Nanotechnol. 2008, 3, 486-460
-
(2008)
Nat. Nanotechnol.
, vol.3
, pp. 486-460
-
-
Lee, E.J.H.1
Balasubramanian, K.2
Weitz, R.T.3
Burghard, M.4
Kern, K.5
-
26
-
-
65449147515
-
Photocurrent Imaging and Efficient Photon Detection in a Graphene Transistor
-
Xia, F.; Mueller, T.; Golizadeh-Mojarad, R.; Freitag, M.; Lin, Y.; Tsang, J.; Perebeinos, V.; Avouris, Ph. Photocurrent Imaging and Efficient Photon Detection in a Graphene Transistor Nano Lett. 2009, 9, 1039-1044
-
(2009)
Nano Lett.
, vol.9
, pp. 1039-1044
-
-
Xia, F.1
Mueller, T.2
Golizadeh-Mojarad, R.3
Freitag, M.4
Lin, Y.5
Tsang, J.6
Perebeinos, V.7
Avouris, Ph.8
-
27
-
-
68949114592
-
Role of Contacts in Graphene Transistors: A Scanning Photocurrent Study
-
Mueller, T.; Xia, F.; Freitag, M.; Tsang, J.; Avouris, Ph. Role of Contacts in Graphene Transistors: A Scanning Photocurrent Study Phys. Rev. B 2009, 79, 245430
-
(2009)
Phys. Rev. B
, vol.79
, pp. 245430
-
-
Mueller, T.1
Xia, F.2
Freitag, M.3
Tsang, J.4
Avouris, Ph.5
-
28
-
-
84860851679
-
Properties of Metal-graphene Contacts
-
Knoch, J.; Chen, Zl.; Appenzeller, J. Properties of Metal-graphene Contacts IEEE Trans. Nanotechnol. 2011, 11, 513-519
-
(2011)
IEEE Trans. Nanotechnol.
, vol.11
, pp. 513-519
-
-
Knoch, J.1
Chen, Zl.2
Appenzeller, J.3
-
29
-
-
60749107706
-
Large Area, Few-layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition
-
Reina, A.; Jia, X.; Ho, J.; Nezich, D.; Son, H.; Bulovic, V.; Dresselhaus, M. S.; Kong, J. Large Area, Few-layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition Nano Lett. 2009, 9, 30-35
-
(2009)
Nano Lett.
, vol.9
, pp. 30-35
-
-
Reina, A.1
Jia, X.2
Ho, J.3
Nezich, D.4
Son, H.5
Bulovic, V.6
Dresselhaus, M.S.7
Kong, J.8
-
30
-
-
59649099717
-
Large-scale Pattern Growth of Graphene Films for Stretchable Transparent Electrodes
-
Kim, K. S.; Zhao, Y.; Jang, H.; Lee, S. Y.; Kim, J. M.; Kim, K. S.; Ahn, J.-H.; Kim, P.; Choi, J.-Y.; Hong, B. H. Large-scale Pattern Growth of Graphene Films for Stretchable Transparent Electrodes Nature 2009, 457, 706-710
-
(2009)
Nature
, vol.457
, pp. 706-710
-
-
Kim, K.S.1
Zhao, Y.2
Jang, H.3
Lee, S.Y.4
Kim, J.M.5
Kim, K.S.6
Ahn, J.-H.7
Kim, P.8
Choi, J.-Y.9
Hong, B.H.10
-
31
-
-
71949115543
-
Transfer of Large-area Graphene Films for High-performance Transparent Conductive Electrodes
-
Li, X.; Zhu, Y.; Cai, W.; Borysiak, M.; Han, B.; Chen, D.; Piner, R. D.; Colombo, L.; Ruoff, R. S. Transfer of Large-area Graphene Films for High-performance Transparent Conductive Electrodes Nano Lett. 2009, 9, 4359-4363
-
(2009)
Nano Lett.
, vol.9
, pp. 4359-4363
-
-
Li, X.1
Zhu, Y.2
Cai, W.3
Borysiak, M.4
Han, B.5
Chen, D.6
Piner, R.D.7
Colombo, L.8
Ruoff, R.S.9
-
32
-
-
66749119012
-
Large-area Synthesis of High-quality and Uniform Graphene Films on Copper Foils
-
Li, X.; Cai, W.; An, J.; Kim, S.; Nah, J.; Yang, D.; Piner, R.; Velamakanni, A.; Jung, I.; Tutuc, E.; Banerjee, S. K.; Colombo, L.; Ruoff, R. S. Large-area Synthesis of High-quality and Uniform Graphene Films on Copper Foils Science 2009, 324, 1312-1314
-
(2009)
Science
, vol.324
, pp. 1312-1314
-
-
Li, X.1
Cai, W.2
An, J.3
Kim, S.4
Nah, J.5
Yang, D.6
Piner, R.7
Velamakanni, A.8
Jung, I.9
Tutuc, E.10
Banerjee, S.K.11
Colombo, L.12
Ruoff, R.S.13
-
33
-
-
70449524577
-
Optical Reflectance Measurement of Large-scale Graphene Layers Synthesized on Nickel Thin Film by Carbon Segregation
-
Mun, J. H.; Hwang, C.; Lim, S. K.; Cho, B. J. Optical Reflectance Measurement of Large-scale Graphene Layers Synthesized on Nickel Thin Film by Carbon Segregation Carbon 2010, 48, 447-451
-
(2010)
Carbon
, vol.48
, pp. 447-451
-
-
Mun, J.H.1
Hwang, C.2
Lim, S.K.3
Cho, B.J.4
-
34
-
-
61649090766
-
Screening Length and Quantum Capacitance in Graphene by Scanning Probe Microscopy
-
Giannazzo, F.; Sonde, S.; Raineri, V.; Rimini, E. Screening Length and Quantum Capacitance in Graphene by Scanning Probe Microscopy Nano Lett. 2009, 9, 23-29
-
(2009)
Nano Lett.
, vol.9
, pp. 23-29
-
-
Giannazzo, F.1
Sonde, S.2
Raineri, V.3
Rimini, E.4
-
35
-
-
68949175478
-
Measurement of the Quantum Capacitance of Graphene
-
Xia, J.; Chen, F.; Li, J.; Tao, N. Measurement of the Quantum Capacitance of Graphene Nat. Nanotechnol. 2009, 4, 505-509
-
(2009)
Nat. Nanotechnol.
, vol.4
, pp. 505-509
-
-
Xia, J.1
Chen, F.2
Li, J.3
Tao, N.4
-
37
-
-
2942700372
-
A Capacitance-based Methodology for Work Function Extraction of Metals on High-κ
-
Jha, R.; Gurganos, J.; Kim, Y. H.; Choi, R.; Lee, J.; Misra, V. A Capacitance-based Methodology for Work Function Extraction of Metals on High-κ IEEE Electron Device Lett. 2004, 25, 420-423
-
(2004)
IEEE Electron Device Lett.
, vol.25
, pp. 420-423
-
-
Jha, R.1
Gurganos, J.2
Kim, Y.H.3
Choi, R.4
Lee, J.5
Misra, V.6
-
39
-
-
36849013956
-
Raman Fingerprint of Charged Impurities in Graphene
-
Casiraghi, C.; Pisana, S.; Novoselov, K. S.; Geim, A. K.; Ferrari, A. C. Raman Fingerprint of Charged Impurities in Graphene Appl. Phys. Lett. 2007, 91, 233108
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 233108
-
-
Casiraghi, C.1
Pisana, S.2
Novoselov, K.S.3
Geim, A.K.4
Ferrari, A.C.5
-
40
-
-
61649126078
-
Probing the Intrinsic Properties of Exfoliated Graphene: Raman Spectroscopy of Free-standing Monolayers
-
Berciaud, S.; Ryu, S.; Brus, L. E.; Heinz, T. F. Probing the Intrinsic Properties of Exfoliated Graphene: Raman Spectroscopy of Free-standing Monolayers Nano Lett. 2009, 9, 346-352
-
(2009)
Nano Lett.
, vol.9
, pp. 346-352
-
-
Berciaud, S.1
Ryu, S.2
Brus, L.E.3
Heinz, T.F.4
-
41
-
-
77957839771
-
Investigation of Interaction between Graphene and Dielectrics
-
Song, S. M.; Cho, B. J. Investigation of Interaction between Graphene and Dielectrics Nanotechnology 2010, 21, 335706
-
(2010)
Nanotechnology
, vol.21
, pp. 335706
-
-
Song, S.M.1
Cho, B.J.2
-
42
-
-
77951026437
-
Graphene on a Hydrophobic Substrate: Doping Reduction and Hysteresis Suppression under Ambient Conditions
-
Lafkioti, M.; Krauss, B.; Lohmann, T.; Zschieschang, U.; Klauk, H.; Klitzing, K. V.; Smet, J. H. Graphene on a Hydrophobic Substrate: Doping Reduction and Hysteresis Suppression under Ambient Conditions Nano Lett. 2010, 10, 1149-1153
-
(2010)
Nano Lett.
, vol.10
, pp. 1149-1153
-
-
Lafkioti, M.1
Krauss, B.2
Lohmann, T.3
Zschieschang, U.4
Klauk, H.5
Klitzing, K.V.6
Smet, J.H.7
-
43
-
-
84856989705
-
Graphene Contacting with Metal Still Graphene?
-
Washington, DC, December 5-7
-
Nagashio, K.; Moriyama, T.; Ifuku, R.; Yamashita, T.; Nishimura, T.; Toriumi, A. Is Graphene Contacting with Metal Still Graphene? IEEE International Electron Devices Meeting, Washington, DC, December 5-7, 2011; pp 27-30.
-
(2011)
IEEE International Electron Devices Meeting
, pp. 27-30
-
-
Nagashio, K.1
Moriyama, T.2
Ifuku, R.3
Yamashita, T.4
Nishimura, T.5
Toriumi, A.6
-
44
-
-
68749104749
-
Origins of Distinctly Different Behaviors of Pd and Pt Contacts on Graphene
-
Wang, Q. J.; Che, J. G. Origins of Distinctly Different Behaviors of Pd and Pt Contacts on Graphene Phys. Rev. Lett. 2009, 103, 066802
-
(2009)
Phys. Rev. Lett.
, vol.103
, pp. 066802
-
-
Wang, Q.J.1
Che, J.G.2
-
45
-
-
62549145342
-
First-Principles Investigation on Bonding Formation and Electronic Structure of Metal-graphene Contacts
-
Ran, Q.; Gao, M.; Guan, X.; Wang, Y.; Yu, Zh. First-Principles Investigation on Bonding Formation and Electronic Structure of Metal-graphene Contacts Appl. Phys. Lett. 2009, 94, 103511
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 103511
-
-
Ran, Q.1
Gao, M.2
Guan, X.3
Wang, Y.4
Yu, Zh.5
-
46
-
-
79951491418
-
Contacting Graphene
-
Robinson, J. A.; LaBella, M.; Zhu, M.; Hollander, M.; Kasarda, R.; Hughes, Z.; Trumbull, K.; Cavalero, R.; Snyder, D. Contacting Graphene Appl. Phys. Lett. 2011, 98, 053103
-
(2011)
Appl. Phys. Lett.
, vol.98
, pp. 053103
-
-
Robinson, J.A.1
Labella, M.2
Zhu, M.3
Hollander, M.4
Kasarda, R.5
Hughes, Z.6
Trumbull, K.7
Cavalero, R.8
Snyder, D.9
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47
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-
0342844334
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Deposition of Preformed Gold Clusters on HOPG and Gold Substrates: Influence of the Substrate on the Thin Film Morphology
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Bardotti, L.; Prevel, B.; Treilleux, M.; Mélinon, P.; Perez, A. Deposition of Preformed Gold Clusters on HOPG and Gold Substrates: Influence of the Substrate on the Thin Film Morphology Appl. Surf. Sci. 2000, 164, 52-59
-
(2000)
Appl. Surf. Sci.
, vol.164
, pp. 52-59
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Bardotti, L.1
Prevel, B.2
Treilleux, M.3
Mélinon, P.4
Perez, A.5
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