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Applied Physics Letters

Volumn 99, Issue 4, 2011, Pages

Effects of polarization-field tuning in GaInN light-emitting diodes

(7) Xu, Jiuru a Schubert, Martin F a Zhu, Di a,c Cho, Jaehee a Schubert, E Fred a Shim, Hyunwook b Sone, Cheolsoo b

a Rensselaer Polytechnic Institute (United States)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

c MICRON TECHNOLOGY INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; ELECTROLUMINESCENCE SPECTRA; HIGH CURRENT DENSITIES; III-V NITRIDES; LOW CURRENT DENSITY; MECHANICAL FORCE; PEAK EFFICIENCY; POLARIZATION FIELD;

LIGHT; LIGHT EMISSION; NITRIDES; POLARIZATION; TUNING;

LIGHT EMITTING DIODES;

EID: 79961055407 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3609783 Document Type: Article

Times cited : (27)

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