S-parameter and perfect pinning of the Fermi level at nonpolar (11-20) a-plane p-GaN surfaces

Applied Physics Letters

Volumn 101, Issue 13, 2012, Pages

  Choi, Yunju ^a   Man Song, Keun ^b   Kim, Hyunsoo ^a  

^a Chonbuk National University   (South Korea)

^b Korea Advanced Nano Fab Center (KANC)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; BARRIER HEIGHTS; BARRIER INHOMOGENEITIES; NON-POLAR; PT CONTACTS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; TRANSPORT BEHAVIOR;

FERMI LEVEL; GALLIUM NITRIDE; NICKEL; PLATINUM; SCHOTTKY BARRIER DIODES;

SCATTERING PARAMETERS;

EID: 84877119344     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4755839     Document Type: Article

References (25)

1. H. M., Ng, Appl. Phys. Lett., 80, 4369 (2002). 10.1063/1.1484543
2. M. D., Craven, S. H., Lim, F., Wu, J. S., Speck, and S. P., DenBaars, Appl. Phys. Lett., 81, 1201 (2002). 10.1063/1.1498010
3. C., Chen, V., Adivarahan, J., Yang, M., Shatalov, E., Kuokstis, and M., Asif Khan, Jpn. J. Appl. Phys., Part 2, 42, L1039 (2003). 10.1143/JJAP.42.L1039
4. J.-H., Ryou, P. D., Yoder, J. P., Liu, Z., Lochner, H., Kim, S., Choi, H. J., Kim, and R. D., Dupuis, IEEE J. Sel. Top. Quantum Electron., 15, 1080 (2009). 10.1109/JSTQE.2009.2014170
5. M., Kuroda, T., Ueda, and T., Tanaka, IEEE Trans. Electron Devices, 57, 368 (2010). 10.1109/TED.2009.2037458
6. W., Mönch, J. Vac. Sci. Technol. B, 14, 2985 (1996). 10.1116/1.588947
7. A. C., Schmitz, A. T., Ping, M. A., Khan, Q., Chen, J. W., Yang, and I., Adesida, J. Electron. Mater., 27, 255 (1998). 10.1007/s11664-998-0396-5
8. S., Arulkumaran, T., Egawa, G.-Y., Zhao, H., Ishikawa, T., Jimbo, and M., Umeno, Jpn. J. Appl. Phys., Part 2, 39, L351 (2000). 10.1143/JJAP.39.L351
9. Y., Park and H., Kim, Appl. Phys. Express, 4, 015702 (2011). 10.1143/APEX.4.015702
10. T., Sawada, Y., Izumi, N., Kimura, K., Suzuki, K., Imai, S.-W., Kim, and T., Suzuki, Appl. Surf. Sci., 216, 192 (2003). 10.1016/S0169-4332(03)00440-9
11. C. K., Tan, A. A., Aziz, and F. K., Yan, Appl. Surf. Sci., 252, 5930 (2006). 10.1016/j.apsusc.2005.08.018
12. Y., Park, K.-S., Ahn, and H., Kim, " Schottky Barrier Height and S-Parameter of Ti, Cu, Pd, and Pt Contacts on p-Type GaN, ", Jpn. J. Appl. Phys. (to be published).
13. K., Song, J., Kim, D., Lee, D., Kang, W., Park, C., Shin, C., Ko, S., Hwang, and D., Yoon, J. Cryst. Growth, 315, 178 (2011). 10.1016/j.jcrysgro.2010. 09.018
14. K., Song, J., Kim, C., Kim, and H., Kim, Jpn. J. Appl. Phys., Part 1, 50, 121002 (2011). 10.1143/JJAP.50.121002
15. J. H., Werner and H. H., Guttler, J. Appl. Phys., 69, 1522 (1991). 10.1063/1.347243
16. J. H., Werner and H. H., Guttler, Phys. Scr., T39, 258 (1991). 10.1088/0031-8949/1991/T39/039
17. Y.-J., Lin, Appl. Phys. Lett., 86, 122109 (2005). 10.1063/1.1890476
18. F., Lucolano, F., Roccaforte, F., Giannazzo, and V., Raineri, J. Appl. Phys., 102, 113701 (2007). 10.1063/1.2817647
19. F. A., Padovani and R., Stratton, Solid-State Electron., 9, 695 (1966). 10.1016/0038-1101(66)90097-9
20. E. H., Rhoderick, IEE Proc., Part I: Solid State Electron Devices, 129, 1 (1982). 10.1049/ip-i-1.1982.0001
21. H., Yu, H., Chen, D., Li, Y., Han, X., Zheng, Q., Huang, and J., Zhou, J. Cryst. Growth, 263, 94 (2004). 10.1016/j.jcrysgro.2003.11.072
22. G., Salviati, N., Armani, C., Zanotti-Fregonara, E., Gombia, M., Albrecht, H., Strunk, M., Mayer, M., Kamp, and A., Gasparotto, MRS Internet J. Nitride Semicond. Res., 5S1, W11.50 (2000).
23. B., Han, M. P., Ulmer, and B. W., Wessels, Physica B, 340-342, 470 (2003). 10.1016/j.physb.2003.09.038
24. Y., Choi and H., Kim, J. Alloys Compd., 533, 15 (2012). 10.1016/j.jallcom.2012.03.115
25. J. S., Kwak, O.-H., Nam, and Y., Park, Appl. Phys. Lett., 80, 3554 (2002). 10.1063/1.1478154