SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 522, Issue , 2012, Pages 345-351

Interface state effects in GaN Schottky diodes

(6) Ahaitouf, A a,b Srour, H c,d Hamady, S Ould Saad c,d Fressengeas, N c,d Ougazzaden, A a,e Salvestrini, J P c,d

a GEORGIA INSTITUTE OF TECHNOLOGY (France)

b SIDI MOHAMED BEN ABDELLAH UNIVERSITY (Morocco)

c UNIVERSITÉ DE LORRAINE (France)

d SUPELEC (France)

e GEORGIA TECH LORRAINE (France)

Author keywords

GaN; Ideality factor; Interface states; Schottky barrier height

Indexed keywords

BUILT-IN VOLTAGE; C-V MEASUREMENT; CAPACITANCE VOLTAGE; CURRENT VOLTAGE; GAN; GAUSSIANS; I-V MEASUREMENTS; IDEALITY FACTORS; INHOMOGENEITIES; INTERFACE STATE DENSITY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY DIODES; SERIES RESISTANCES; STATE DISTRIBUTIONS; TEMPERATURE DEPENDENCE;

ELECTRIC RESISTANCE; GALLIUM NITRIDE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES;

INTERFACE STATES;

EID: 84868537755 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2012.08.029 Document Type: Conference Paper

Times cited : (33)

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