Schottky barrier characteristics of Pt contacts to n -type InGaN

Journal of Applied Physics

Volumn 99, Issue 7, 2006, Pages

  Jang, Ja Soon ^a   Kim, Donghwan ^a   Seong, Tae Yeon ^a  

^a Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; COMPUTATIONAL METHODS; ELECTRIC CURRENTS; INDIUM COMPOUNDS; THERMAL EFFECTS;

ANNEALING TEMPERATURE; CAPACITANCE-VOLTAGE (C-V) METHODS; SCHOTTKY BARRIER CHARACTERISTICS; TEMPERATURE DEPENDENCE;

ELECTRIC POTENTIAL;

EID: 33645912913     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2187274     Document Type: Article

References (17)

1. M. A. Khan, Q. Chen, M. S. Shur, B. T. MsDermott, and J. A. Higgins, IEEE Electron Device Lett. 17, 325 (1996).
2. M. A. Khan, Q. Chen, M. S. Shur, B. T. MsDermott, J. A. Higgins, J. Burm, W. J. Schaff, and L. F. Eastman, IEEE Electron Device Lett. 17, 584 (1996).
3. L. Wang, M. I. Nathan, T.-H. Lim, M. A. Khan, and Q. Chen, Appl. Phys. Lett. 68, 1267 (1996).
4. Z. Fan, J. Electron. Mater. 25, 1703 (1996).
5. J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, and C. M. Chang, Appl. Phys. Lett. 72, 3317 (1998).
6. Q. Z. Liu, L. S. Yu, S. S. Lau, J. M. Redwing, N. R. Perkins, and T. F. Kuech, Appl. Phys. Lett. 70, 1275 (1997).
7. E. V. Kalinina, N. J. Kurnetsov, V. A. Dmitriev, K. G. Irvine, and C. H. Carter, Jr., J. Electron. Mater. 25, 831 (1996).
8. Q. Z. Liu, L. Shen, K. V. Smith, C. W. Tu, E. T. Yu, S. S. Lau, N. R. Perkins, and T. F. Kuech, Appl. Phys. Lett. 70, 990 (1997).
9. L. S. Yu, Q. Z. Liu, Q. J. Xing, D. J. Qlao, S. S. Lau, and J. Redwing, J. Appl. Phys. 84, 2099 (1998).
10. P. Boguslawsk, E. L. Briggs, and J. Bernholc, Phys. Rev. B 51, 17255 (1995).
11. S. X. Li, Phys. Rev. B 71, 161201-1 (2005).
12. F. Ren, J. Vac. Sci. Technol. A 15, 802 (1997).
13. H.-K. Kim, J.-S. Jang, S.-J. Park, and T.-Y. Seong, J. Electrochem. Soc. 147, 1573 (2000).
14. M. Shur, Physics of Semiconductor Devices (Prentice Hall, Englewood Cliffs, NJ, 1990).
15. O. Madelung, Semiconductors: Data Handbook, 3rd ed. (Springer-Verlag, Berlin, 2004).
16. J.-S. Jang, S. J. Park, and T.-Y. Seong, J. Vac. Sci. Technol. B 17, 2667 (1999).
17. C. W. Wilmsen, Physics and Chemistry of III-V Compound Semiconductor Interfaces (Plenum, New York, 1985).