Large-scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodes

Nanotechnology

Volumn 21, Issue 17, 2010, Pages

  Jo, Gunho ^a   Choe, Minhyeok ^a   Cho, Chu Young ^a   Kim, Jin Ho ^b   Park, Woojin ^a   Lee, Sangchul ^a   Hong, Woong Ki ^a,c   Kim, Tae Wook ^a,d   Park, Seong Ju ^a   Hong, Byung Hee ^b   Kahng, Yung Ho ^a   Lee, Takhee ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d University of Washington   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BATCH FABRICATION; BLUE LEDS; FILM PROPERTIES; GAN LEDS; GAN LIGHT-EMITTING DIODES; INDIUM TIN OXIDE ELECTRODES; LIGHT OUTPUT; NICKEL FILM; TRANSPARENT CONDUCTING ELECTRODES; WAVELENGTH RANGES;

CHEMICAL VAPOR DEPOSITION; CONDUCTIVE FILMS; GALLIUM NITRIDE; GRAPHENE; GRAPHITE ELECTRODES; INDIUM COMPOUNDS; LIGHT EMISSION; OPTOELECTRONIC DEVICES; TIN; TIN OXIDES;

LIGHT EMITTING DIODES;

EID: 77957017614     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/17/175201     Document Type: Article

References (27)

1. Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V and Firsov A A 2004 Science 306 666
2. Meric I, Han M Y, Young A F, Ozyilmaz B, Kim P and Shepard K L 2008 Nat. Nanotechnol. 3 654
3. Zhang Y, Tan J W, Stormer H L and Kim P 2005 Nature 438 201
4. Chen J-H, Jang C, Xiao S, Ishigami M and Fuhrer M S 2008 Nat. Nanotechnol. 3 206
5. Lee C, Wei X, Kysar J W and Hone J 2008 Science 321 385
6. Kosynkin D V, Higginbotham A L, Sinitskii A, Lomeda J R, Dimiev A, Price B K and Tour J M 2009 Nature 458 872
7. Berger C et al 2006 Science 312 1191
8. Eda G, Fanchini G and Chhowalla M 2008 Nat. Nanotechnol. 3 270
9. Kim K S, Zhao Y, Jang H, Lee S Y, Kim J M, Kim K S, Ahn J-H, Kim P, Choi J-Y and Hong B H 2009 Nature 457 706
10. Li X et al 2009 Science 324 1312
11. Reina A, Jia X, Ho J, Nezich D, Son H, Bulovic V, Dresselhaus M S and Kong J 2008 Nano Lett. 9 30
12. Chae S J et al 2009 Adv. Mater. 21 2328
13. Arco L G D, Zhang Y, Kumar A and Zhou C 2009 IEEE Trans. Nanotechnol. 8 135
14. Di C-A, Wei D, Yu G, Liu Y, Guo Y and Zhu D 2008 Adv. Mater. 20 3289
15. Chichibu S F et al 2006 Nat. Mater. 5 810
16. Chamings J, Ahmed S, Sweeney S J, Odnoblyudov V A and Tu C W 2008 Appl. Phys. Lett. 92 021101
17. Na S-I, Kim S-S, Jo J and Kim D-Y 2008 Adv. Mater. 20 4061
18. Wang X, Zhi L and Mullen K 2007 Nano Lett. 8 323
19. Tung V C, Chen L-M, Allen M J, Wassei J K, Nelson K, Kaner R B and Yang Y 2009 Nano Lett. 9 1949
20. Wang Y, Chen X, Zhong Y, Zhu F and Loh K P 2009 Appl. Phys. Lett. 95 063302
21. Blake P et al 2008 Nano Lett. 8 1704
22. Wu J, Agrawal M, Becerril H A, Bao Z, Liu Z, Chen Y and Peumans P 2010 ACS Nano 4 43
23. Gupta A, Chen G, Joshi P, Tadigadapa S and Eklund P C 2006 Nano Lett. 6 2667
24. Ferrari A C et al 2006 Phys. Rev. Lett. 97 187401
25. van der Pauw L J 1958 Philips Res. Rep. 13 1
26. Kuokstis E, Yang J W, Simin G, Khan M A, Gaska R and Shur M S 2002 Appl. Phys. Lett. 80 977
27. Chichibu S, Sota T, Wada K and Nakamura S 1998 J. Vac. Sci. Technol. B 16 2204