Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-7

  Kumar, Ashish ^a   Arafin, Shamsul ^b   Amann, Markus Christian ^b   Singh, Rajendra ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

Hall effect; Pt GaN Schottky diode; Temperature dependence; UHV e beam evaporation

Indexed keywords

ACTIVATION ENERGY; DIODES; GALLIUM NITRIDE; HALL EFFECT; III-V SEMICONDUCTORS; TEMPERATURE DISTRIBUTION; VACUUM EVAPORATION;

BARRIER INHOMOGENEITIES; E BEAM EVAPORATION; ELECTRICAL CHARACTERISTIC; ELECTRICAL CHARACTERIZATION; HALL EFFECT MEASUREMENT; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; TEMPERATURE DEPENDENCE;

SCHOTTKY BARRIER DIODES;

EID: 84891471881     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-481     Document Type: Article

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