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Volumn 25, Issue 32, 2013, Pages 4470-4476

Wet chemical etching of semipolar GaN planes to obtain brighter and cost-competitive light emitters

Author keywords

extraction efficiencies; light emitting diodes; ohmic contacts; semipolar GaN planes; wet etching

Indexed keywords

CELL STRUCTURE; EXTRACTION EFFICIENCIES; LIGHT EMITTERS; LIGHT EXTRACTION; M-PLANE; OUTPUT PERFORMANCE; SEMIPOLAR GAN; TRIGONAL PRISMS;

EID: 84882578082     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201301640     Document Type: Article
Times cited : (55)

References (36)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.