Ohmic contacts to n-face p-gan using ni/au for the fabrication of polarization inverted light-emitting diodes

Journal of Nanoscience and Nanotechnology

Volumn 13, Issue 8, 2013, Pages 5715-5718

  Han, Seung Cheol ^a   Kim, Jae Kwan ^a   Kim, Jun Young ^a   Lee, Dong Min ^a   Yoon, Jae Sik ^b   Kim, Jong Kyu ^c   Schubert, E F ^d   Lee, Ji Myon ^a  

^a Sunchon National University   (South Korea)

^b Korea Basic Science Institute (KBSI)   (South Korea)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

^d RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

LED; N Face p GaN; Surface Treatment; XPS

Indexed keywords

ANNEALING TEMPERATURES; LINEAR DECREASE; N-FACE P-GAN; P-TYPE GAN; SPECIFIC CONTACT RESISTANCES; SURFACE OXIDE LAYER; X-RAY PHOTOEMISSION SPECTRA;

CONTACT RESISTANCE; ELECTRIC CONTACTORS; ELECTRIC PROPERTIES; GALLIUM NITRIDE; OHMIC CONTACTS; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

LIGHT EMITTING DIODES;

EID: 84883371136     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2013.7072     Document Type: Article

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