Suppression of 1/ f noise in near-ballistic h -BN-graphene- h- BN heterostructure field-effect transistors

Applied Physics Letters

Volumn 107, Issue 2, 2015, Pages

  Stolyarov, Maxim A ^a   Liu, Guanxiong ^a   Rumyantsev, Sergey L ^b,c   Shur, Michael ^b   Balandin, Alexander A ^a  

^a University of California Riverside   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BORON NITRIDE; CHARGE CARRIERS; GATE DIELECTRICS; GRAPHENE; NITRIDES; SPECTRAL DENSITY; SURFACE DEFECTS;

GRAPHENE DEVICES; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; HEXAGONAL BORON NITRIDE; NOISE SPECTRAL DENSITY; NOISE SUPPRESSION; OPTOELECTRONIC APPLICATIONS; PHYSICAL MECHANISM; ROOM TEMPERATURE;

FIELD EFFECT TRANSISTORS;

EID: 84937047275     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4926872     Document Type: Article

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