The effect of a transverse magnetic field on 1/f noise in graphene

Applied Physics Letters

Volumn 103, Issue 17, 2013, Pages

  Rumyantsev, S L ^a,b   Coquillat, D ^c   Ribeiro, R ^d   Goiran, M ^d   Knap, W ^c,e   Shur, M S ^a   Balandin, A A ^f   Levinshtein, M E ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c UNIVERSITÉ MONTPELLIER 2   (France)

^d GRENOBLE HIGH MAGNETIC FIELD LABORATORY   (France)

^e INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^f UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; GATE BIAS; GATE VOLTAGES; GRAPHENE DEVICES; HIGH MAGNETIC FIELDS; LOW MAGNETIC FIELDS; NOISE LEVELS; TRANSVERSE MAGNETIC FIELD;

GRAPHENE;

MAGNETIC FIELDS;

EID: 84887060646     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4826644     Document Type: Article

References (31)

1. L. Vicarelli, M. S. Vitiello, D. Coquillat, A. Lombardo, A. C. Ferrari, W. Knap, M. Polini, V. Pellegrini, and A. Tredicucci, Nature Mater. 11, 865 (2012). 10.1038/nmat3417
2. F. Schedin, A. K. Geim, S. V. Morozov, E. W. Hill, P. Blake, M. I. Katsnelson, and K. S. Novoselov, Nature Mater. 6, 652-655 (2007). 10.1038/nmat1967
3. S. Rumyantsev, G. Liu, M. Shur, R. A. Potyrailo, and A. A. Balandin, Nano Lett. 12, 2294-2298 (2012). 10.1021/nl3001293
4. Special issue on graphene, Semicond. Sci. Technol. 25 (3), (2010).
5. S. Rumyantsev, G. Liu, W. Stillman, M. Shur, and A. A. Balandin, J. Phys.: Condens. Matter 22, 395302 (2010). 10.1088/0953-8984/22/39/395302
6. S. Rumyantsev, G. Liu, W. Stillman, V. Yu. Kachorovskii, M. S. Shur, and A. A. Balandin, in Proceedings of the IEE 21st International Conference on Noise and Fluctuations 2011, Toronto, Canada, 12-16 June 2011 (IEEE, Piscataway, NJ), pp. 234-237 10.1109/ICNF.2011.5994311.
7. G. Liu, S. Rumyantsev, M. Shur, and A. A. Balandin, Appl. Phys. Lett. 100, 033103 (2012). 10.1063/1.3676277
8. B. Grandchamp, S. Frégonèse, C. Majek, C. Hainaut, C. Maneux, N. Meng, H. Happy, and T. Zimmer, IEEE Trans. on Electron Dev. 59, 516-518 (2012) 10.1109/TED.2011.2175930.
9. A. Kaverzin, A. S. Mayorov, A. Shytov, and D. W. Horsell, Phys. Rev. 85, 075435 (2012). 10.1103/PhysRevB.85.075435
10. N. Pal, S. Ghatak, V. Kochat, E. S. Sneha, A. Sampathkumar, S. Raghavan, and A. Ghosh, ACS Nano 5, 2075-2081 (2011). 10.1021/nn103273n
11. Md. Z. Hossain, S. Rumyantsev, M. S. Shur, and A. A. Balandin, Appl. Phys. Lett. 102, 153512 (2013). 10.1063/1.4802759
12. G. Liu, S. Rumyantsev, M. S. Shur, and A. A. Balandin, Appl. Phys. Lett. 102, 093111 (2013). 10.1063/1.4794843
13. A. L. McWhorter, in Proceedings of the Conference on the Physics of Semiconductors and Surfaces, Philadelphia (University of Pennsylvania Press, 1956), pp. 207-229.
14. L. K. J. Vandamme, X. Li, and D. Rigaud, IEEE Trans. Electron Devices 41, 1936-1945 (1994). 10.1109/16.333809
15. M. E. Levinshtein, A. A. Balandin, S. L. Rumyantsev, and M. S. Shur, in Noise and Fluctuations Control in Electronic Devices, edited by, A. Balandin, (American Scientific Publishers, 2002).
16. J. H. Scofield, J. V. Mantese, and W. W. Webb, Phys. Rev. B 34, 723 (1986). 10.1103/PhysRevB.34.723
17. A. P. Dmitriev, M. E. Levinshtein, and S. L. Rumyantsev, J. Appl. Phys. 106, 024514 (2009). 10.1063/1.3186620
18. Yu. M. Galperin, V. G. Karpov, and V. I. Kozub, Sov. Phys. JETP 68, 648 (1989).
19. H. J. Lippmann and F. Kuhrt, Naturwiss. 45, 156 (1958); 10.1007/BF00621989
20. H. J. Lippmann and F. Kuhrt, Z. Naturforrsh. 13a, 452 (1958);
21. H. J. Lippmann and F. Kuhrt, Z. Naturforrsh. 13a, 474 (1958).
22. M. E. Levinshtein and S. L. Rumyantsev, Sov. Phys. Semicond. 17, 1167 (1983).
23. L. G. Cançado, A. Jorio, E. H. Martins Ferreira, F. Stavale, C. A. Achete, R. B. Capaz, M. V. O. Moutinho, A. Lombardo, T. S. Kulmala, and A. C. Ferrari, Nano Lett. 11, 3190-3196 (2011). 10.1021/nl201432g
24. M. H. Song and H. S. Min, J. Appl. Phys. 58, 4221 (1985). 10.1063/1.335555
25. M. H. Song, A. N. Birbas, A. van der Ziel, and A. D. van Rheenen, J. Appl. Phys. 64, 727 (1988). 10.1063/1.341940
26. Y.-S. Kim, S.-S. Yun, C. H. Park, H. S. Min, and Y. J. Park, Solid-State Electron. 48, 641 (2004). 10.1016/j.sse.2003.09.007
27. S. L. Rumyantsev, M. S. Shur, N. Dyakonova, W. Knap, Y. Meziani, F. Pascal, A. Hoffman, X. Hu, Q. Fareed, Yu. Bilenko, and R. Gaska, J. Appl. Phys. 96, 3845 (2004). 10.1063/1.1787911
28. N. Dyakonova, S. L. Rumyantsev, M. S. Shur, Y. Mezziani, F. Pascal, A. Hoffman, Yu. Bielenko, R. Gaska, and W. Knap, Phys. Status Solidi A 202, 677 (2005). 10.1002/pssa.200460472
29. R. S. Singh, X. Wang, W. Chen, Ariando, and A. T. S. Wee, Appl. Phys. Lett. 101, 183105 (2012). 10.1063/1.4765656
30. G. Yu. Vasil'eva, P. S. Alekseev, Yu. L. Ivanov, Yu. B. Vasil'ev, D. Smirnov, H. Schmidt, R. J. Haug, F. Gouider, and G. Nachtwei, JETP Lett. 96, 471 (2012). 10.1134/S0021364012190137
31. J. Jobst, D. Waldmann, I. V. Gornyi, A. D. Mirlin, and H. B. Weber, Phys. Rev. Lett. 108, 106601 (2012). 10.1103/PhysRevLett.108.106601