Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices

Applied Physics Letters

Volumn 106, Issue 2, 2015, Pages

  Samnakay, R ^a   Jiang, C ^a   Rumyantsev, S L ^b,c   Shur, M S ^b   Balandin, A A ^a  

^a University of California Riverside   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; GAS DETECTORS; MOLYBDENUM COMPOUNDS; POWER QUALITY; SPECTRAL DENSITY; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

CHANNEL CONDUCTANCE; CURRENT STABILITY; GRAPHENE DEVICES; LOW-FREQUENCY CURRENTS; ORDERS OF MAGNITUDE; REFERENCE DEVICES; SOURCE-DRAIN CURRENT; THIN FILM FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 84923899776     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4905694     Document Type: Article

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