Low-frequency noise and hysteresis in graphene field-effect transistors on oxide

Micro and Nano Letters

Volumn 5, Issue 1, 2010, Pages 37-41

  Imam, S A ^a   Sabri, S ^a   Szkopek, T ^a  

^a MCGILL UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; CHANNEL CURRENTS; GRAPHENES; ION MOTIONS; LOW-FREQUENCY CURRENTS; LOW-FREQUENCY NOISE; NEUTRALITY POINT; OXIDE INTERFACES; SAMPLE TEMPERATURE; SILICON SUBSTRATES; SIMPLE MODEL; STRESS TIME; TEMPERATURE DEPENDENCE; THERMALLY ACTIVATED;

GRAPHENE; GRAPHITE; HYSTERESIS; MESFET DEVICES; MONOLAYERS; SILICON OXIDES; SPECTRAL DENSITY; THERMAL NOISE;

FIELD EFFECT TRANSISTORS;

GRAPHENE; OXIDE; SILICON DIOXIDE;

ARTICLE; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTOR; HYSTERESIS; LOW FREQUENCY NOISE; PHYSICAL STRESS; SPECTROMETRY; TEMPERATURE;

EID: 77149140818     PISSN: None     EISSN: 17500443     Source Type: Journal    
DOI: 10.1049/mnl.2009.0052     Document Type: Article

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