Effect of spatial charge inhomogeneity on 1/f noise behavior in graphene

Nano Letters

Volumn 10, Issue 9, 2010, Pages 3312-3317

  Xu, Guangyu ^a   Torres Jr , Carlos M ^a   Zhang, Yuegang ^b   Liu, Fei ^c   Song, Emil B ^a   Wang, Minsheng ^a   Zhou, Yi ^a   Zeng, Caifu ^a   Wang, Kang L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

1 f noise; Dirac point; Graphene; spatial charge inhomogeneity

Indexed keywords

1/F NOISE; BI-LAYER; DIRAC POINT; FOUR-PROBE; GATE DEPENDENCE; GRAPHENE DEVICES; GRAPHENES; INHOMOGENEITIES; LOW-FREQUENCY NOISE; NOISE BEHAVIOR; NOISE REDUCTIONS; SCATTERING MECHANISMS; SINGLE LAYER;

SIGNAL TO NOISE RATIO;

GRAPHENE;

EID: 77956426456     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl100985z     Document Type: Article

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