Mobility-dependent low-frequency noise in graphene field-effect transistors

ACS Nano

Volumn 5, Issue 10, 2011, Pages 8124-8130

  Zhang, Yan ^a   Mendez, Emilio E ^a,b   Du, Xu ^a  

^a STONY BROOK UNIVERSITY   (United States)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

1 f noise; graphene; Hooge parameter; mobility; potential fluctuations

Indexed keywords

1/F NOISE; DIRAC POINT; ELECTRONIC MATERIALS; GATE VOLTAGES; GRAPHENE DEVICES; HOOGE PARAMETERS; INHOMOGENEITIES; LOW FREQUENCY; LOW-FREQUENCY NOISE; NOISE AMPLITUDE; POTENTIAL FLUCTUATIONS; RELATIVE CONTRIBUTION; SCATTERING MECHANISMS; TEMPERATURE RANGE; TRANSPORT CHARACTERISTICS;

AMPLITUDE MODULATION; FIELD EFFECT TRANSISTORS; GRAPHENE; TRANSISTORS;

CARRIER MOBILITY;

EID: 80055012858     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn202749z     Document Type: Article

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