Ultimate response time of high electron mobility transistors

Journal of Applied Physics

Volumn 117, Issue 17, 2015, Pages

  Rudin, Sergey ^a   Rupper, Greg ^a   Shur, Michael ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC WAVE VELOCITY; BALLISTICS; DELAY CIRCUITS; ELECTROMAGNETIC PULSE; ELECTRON GAS; FIELD EFFECT TRANSISTORS; PLASMA WAVES; THRESHOLD VOLTAGE; TRANSIT TIME DEVICES; TWO DIMENSIONAL ELECTRON GAS; WAVE PROPAGATION; WIRELESS TELECOMMUNICATION SYSTEMS;

BALLISTIC TRANSPORTS; EFFECTIVE ELECTRONS; GATE VOLTAGE SWING; HIGH MOBILITY DEVICES; HYDRODYNAMIC SIMULATION; TERAHERTZ DETECTORS; THEORETICAL STUDY; ULTRA HIGH SPEED;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84928902283     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4919706     Document Type: Article

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