Graphene ambipolar multiplier phase detector

IEEE Electron Device Letters

Volumn 32, Issue 10, 2011, Pages 1328-1330

  Yang, Xuebei ^a   Liu, Guanxiong ^b   Rostami, Masoud ^a   Balandin, Alexander A ^b   Mohanram, Kartik ^c  

^a Rice University   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c University of Pittsburgh   (United States)

Author keywords

Ambipolarity; graphene; graphene field effect transistor; phase detector

Indexed keywords

AMBIPOLAR; AMBIPOLARITY; CURRENT CONDUCTION; GRAPHENE TRANSISTORS; INSULATOR THICKNESS; ORDERS OF MAGNITUDE; OUTPUT RESISTANCE; PHASE DETECTION; PHASE DETECTORS; SERIES RESISTANCES; TECHNOLOGICAL PARAMETERS; TOP-GATE;

DETECTORS; ELECTRIC CHARGE; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; FREQUENCY MULTIPLYING CIRCUITS; GRAPHENE; SIGNAL DETECTION; TRANSISTORS;

ANTENNA PHASED ARRAYS;

EID: 80053571582     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2162576     Document Type: Article

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