Origin of 1/f noise in graphene multilayers: Surface vs. volume

Applied Physics Letters

Volumn 102, Issue 9, 2013, Pages

  Liu, Guanxiong ^a   Rumyantsev, Sergey ^b,c   Shur, Michael S ^b   Balandin, Alexander A ^a,d  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c IOFFE INSTITUTE   (Russian Federation)

^d University of California Riverside   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; ATOMIC LAYER; DOWN-SCALING; ELECTRICAL CONDUCTORS; GRAPHENE MULTILAYERS; HIGH QUALITY; LOW-FREQUENCY NOISE; SEMICONDUCTOR FILMS;

MULTILAYERS; SPECTRAL DENSITY;

GRAPHENE;

EID: 84875138901     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4794843     Document Type: Article

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