Suspended graphene sensors with improved signal and reduced noise

Nano Letters

Volumn 10, Issue 5, 2010, Pages 1864-1868

  Cheng, Zengguang ^a   Li, Qiang ^a   Li, Zhongjun ^a   Zhou, Qiaoyu ^a   Fang, Ying ^a  

^a NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

Author keywords

Graphene; Noise; PH sensing; Suspended

Indexed keywords

AQUEOUS SOLUTIONS; BEFORE AND AFTER; BIOLOGICAL SENSORS; ELECTRICAL MEASUREMENT; ELECTROLYTE GATE; ELECTRON CARRIER; ENHANCED PERFORMANCE; FUNDAMENTAL PARAMETERS; GRAPHENE DEVICES; IN-SITU; LOW-FREQUENCY NOISE; NANO DEVICE; NANO-DEVICES; NOISE; OPERATING MODES; P-TYPE; PH SENSING;

ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GRAPHENE; GRAPHITE; MESFET DEVICES; NANOSTRUCTURED MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; SENSORS; SILICON COMPOUNDS; SILICON OXIDES; TRANSPORT PROPERTIES;

PH SENSORS;

GRAPHITE; NANOMATERIAL;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; GENETIC PROCEDURES; INSTRUMENTATION; NANOTECHNOLOGY; PH; SEMICONDUCTOR; SENSITIVITY AND SPECIFICITY; ULTRASTRUCTURE;

BIOSENSING TECHNIQUES; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GRAPHITE; HYDROGEN-ION CONCENTRATION; NANOSTRUCTURES; NANOTECHNOLOGY; SENSITIVITY AND SPECIFICITY; TRANSISTORS, ELECTRONIC;

EID: 77952416022     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl100633g     Document Type: Article

References (35)

1. Novoselov, K. S.; Jiang, D.; Schedin, F.; Booth, T. J.; Khotkevich, V. V.; Morozov, S. V.; Geim, A. K. Proc. Natl. Acad. Sci. U.S.A. 2005, 102 (30) 10451-10453
2. Zhang, Y. B.; Tan, Y. W.; Stormer, H. L.; Kim, P. Nature 2005, 438 (7065) 201-204
3. Geim, A. K.; Novoselov, K. S. Nat. Mater. 2007, 6 (3) 183-191
4. Novoselov, K. S.; Jiang, Z.; Zhang, Y.; Morozov, S. V.; Stormer, H. L.; Zeitler, U.; Maan, J. C.; Boebinger, G. S.; Kim, P.; Geim, A. K. Science 2007, 315 (5817) 1379-1379
5. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Science 2004, 306 (5296) 666-669
6. Meyer, J. C.; Girit, C. O.; Crommie, M. F.; Zettl, A. Nature 2008, 454 (7202) 319-322
7. Wang, X.; Zhi, L. J.; Mullen, K. Nano Lett. 2008, 8 (1) 323-327
8. Liu, Z.; Robinson, J. T.; Sun, X. M.; Dai, H. J. J. Am. Chem. Soc. 2008, 130 (33) 10876
9. Geim, A. K. Science 2009, 324 (5934) 1530-1534
10. Schedin, F.; Geim, A. K.; Morozov, S. V.; Hill, E. W.; Blake, P.; Katsnelson, M. I.; Novoselov, K. S. Nat. Mater. 2007, 6 (9) 652-655
11. Mohanty, N.; Berry, V. Nano Lett. 2008, 8 (12) 4469-4476
12. Ohno, Y.; Maehashi, K.; Yamashiro, Y.; Matsumoto, K. Nano Lett. 2009, 9 (9) 3318-3322
13. Ang, P. K.; Chen, W.; Wee, A. T. S.; Loh, K. P. J. Am. Chem. Soc. 2008, 130 (44) 14392-14393
14. Du, X.; Skachko, I.; Barker, A.; Andrei, E. Y. Nat. Nanotechnol.. 2008, 3 (8) 491-495
15. Lin, Y. M.; Avouris, P. Nano Lett. 2008, 8 (8) 2119-2125
16. Bolotin, K. I.; Sikes, K. J.; Jiang, Z.; Klima, M.; Fudenberg, G.; Hone, J.; Kim, P.; Stormer, H. L. Solid State Comm. 2008, 146 (9-10) 351-355
17. Liu, G.; Stillman, W.; Rumyantsev, S.; Shao, Q.; Shur, M.; Balandin, A. A. Appl. Phys. Lett. 2009, 95 (3), 033103.
18. Cho, S.; Fuhrer, M. S. Phys. Rev. B 2008, 77 (8), 084102.
19. Li, Q.; Li, Z. J.; Chen, M. R.; Fang, Y. Nano Lett. 2009, 9 (5) 2129-2132
20. Long etching time was found to increase the contact resistance of Gra-FETs due to, for example, the deformation of metal contacts.
21. Akarvardar, K.; Eggimann, C.; Tsamados, D.; Chauhan, Y. S.; Wan, G. C.; Lonescu, A. M.; Howe, R. T.; Wong, H. S. P. IEEE Trans. Electron Devices 2008, 55 (1) 48-59
22. Rosenblatt, S.; Yaish, Y.; Park, J.; Gore, J.; Sazonova, V.; McEuen, P. L. Nano Lett. 2002, 2 (8) 869-872
23. Chen, F.; Qing, Q.; Xia, J. L.; Li, J. H.; Tao, N. J. J. Am. Chem. Soc. 2009, 131 (29) 9908-9909
24. Zheng, G. F.; Patolsky, F.; Cui, Y.; Wang, W. U.; Lieber, C. M. Nat. Biotechnol. 2005, 23 (10) 1294-1301
25. Chen, F.; Xia, J. L.; Ferry, D. K.; Tao, N. J. Nano Lett. 2009, 9 (7) 2571-2574
26. Jang, C.; Adam, S.; Chen, J. H.; Williams, D.; Das Sarma, S.; Fuhrer, M. S. Phys. Rev. Lett. 2008, 101 (14) 146805
27. Lin, Y. M.; Appenzeller, J.; Knoch, J.; Chen, Z. H.; Avouris, P. Nano Lett. 2006, 6, 930-936
28. Stern, E.; Klemic, J. F.; Routenberg, D. A.; Wyrembak, P. N.; Turner-Evans, D. B.; Hamilton, A. D.; LaVan, D. A.; Fahmy, T. M.; Reed, M. A. Nature 2007, 445 (7127) 519-522
29. Mitchell, F. H. Introduction to electronics design, 2 nd ed.; Prentice-Hall, Inc: Upper Saddle River, NJ, 1992.
30. Larrimore, L.; Nad, S.; Zhou, X. J.; Abruna, H.; McEuen, P. L. Nano Lett. 2006, 6 (7) 1329-1333
31. Eisele, I.; Doll, T.; Burgmair, M. Sens. Actuators, B 2001, 78 (1-3) 19-25
32. Oprea, A.; Simon, E.; Fleischer, M.; Frerichs, H. P.; Wilbertz, C.; Lehmann, M.; Weimar, U. Sens. Actuators, B 2005, 111, 582-586
33. Cui, Y.; Wei, Q. Q.; Park, H. K.; Lieber, C. M. Science 2001, 293 (5533) 1289-1292
34. Li, C.; Curreli, M.; Lin, H.; Lei, B.; Ishikawa, F. N.; Datar, R.; Cote, R. J.; Thompson, M. E.; Zhou, C. W. J. Am. Chem. Soc. 2005, 127 (36) 12484-12485
35. Lee, K.; Kwon, J. H.; Moon, S. I.; Cho, W. S.; Ju, B. K.; Lee, Y. H. Mater. Lett. 2007, 61 (14-15) 3201-3203