High Photoresponsivity and Short Photoresponse Times in Few-Layered WSe2 Transistors

ACS Applied Materials and Interfaces

Volumn 7, Issue 22, 2015, Pages 12080-12088

  Pradhan, Nihar R ^a   Ludwig, Jonathan ^a,b   Lu, Zhengguang ^a,b   Rhodes, Daniel ^a,b   Bishop, Michael M ^a   Thirunavukkuarasu, Komalavalli ^a   McGill, Stephen A ^a   Smirnov, Dmitry ^a   Balicas, Luis ^a,b  

^a FLORIDA STATE UNIVERSITY   (United States)

^b Florida State University   (United States)

Author keywords

field effect transistors; photocurrent; quantum efficiency; transition metal dichalcogenides; tungsten diselenide; two dimensional atomic layers

Indexed keywords

ATOMS; FIELD EMISSION DISPLAYS; PHOTOCURRENTS; QUANTUM EFFICIENCY; SELENIUM COMPOUNDS; TRANSISTORS; TRANSITION METALS; TRANSPORT PROPERTIES;

ATOMIC LAYER; CHEMICAL VAPOR TRANSPORT; COMPLEX ARCHITECTURES; EXTERNAL QUANTUM EFFICIENCY; PHOTOCURRENT RESPONSE; TRANSITION METAL DICHALCOGENIDES; TUNGSTEN DISELENIDE; WHITE-LIGHT ILLUMINATION;

FIELD EFFECT TRANSISTORS;

EID: 84935904294     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b02264     Document Type: Article

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