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Applied Physics Letters

Volumn 106, Issue 2, 2015, Pages

Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer

(5) Son, Seokki a Yu, Sunmoon b Choi, Moonseok a Kim, Dohyung a Choi, Changhwan a

a Hanyang University (South Korea)

b Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BUFFER LAYERS; METALLIC COMPOUNDS; METALS; MOLYBDENUM COMPOUNDS; MOLYBDENUM OXIDE;

ALD PRECURSOR; FUNCTIONALIZATIONS; HIGH TEMPERATURE; METAL OXIDES; MOLYBDENUM DISULFIDE; NUCLEATION SITES; SURFACE COVERAGES;

ATOMIC LAYER DEPOSITION;

EID: 84923771240 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4905634 Document Type: Article

Times cited : (37)

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