Integrated ferroelectric stacked mim capacitors with 100 nF/mm 2and 90 v breakdown as replacement for discretes

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 56, Issue 3, 2009, Pages 425-428

  Roest, Aarnoud ^a   Mauczok, Rüdiger ^b   Reimann, Klaus ^a   Van Leuken Peters, Linda ^a   Klee, Mareike ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATED LIFETIME TESTING; BREAK DOWN VOLTAGES; DIELECTRIC CONSTANTS; ELECTROSTATIC DISCHARGE PROTECTIONS; FERROELECTRIC CAPACITORS; HIGH-CAPACITANCE DENSITIES; INTEGRATED CAPACITORS; MATERIAL OPTIMIZATIONS; META-INSULATOR-METAL CAPACITORS; MIM CAPACITORS; THIN FILM FERROELECTRICS;

CAPACITORS; ELECTRIC CONDUCTIVITY; FERROELECTRICITY; IONIZATION OF GASES; MIM DEVICES; PAPER CAPACITORS; SEMICONDUCTING SILICON COMPOUNDS;

CAPACITANCE;

EID: 65349112536     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2009.1060     Document Type: Article

References (7)

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