Two-dimensional heterojunction interlayer tunneling field effect transistors (Thin-TFETs)

IEEE Journal of the Electron Devices Society

Volumn 3, Issue 3, 2015, Pages 200-207

  Li, Mingda Oscar ^a,c   Esseni, David ^b   Nahas, Joseph J ^a   Jena, Debdeep ^a,c   Xing, Huili Grace ^a,c  

^a University of Notre Dame   (United States)

^b UNIVERSITY OF UDINE   (Italy)

^c School of Operations Research and Industrial Engineering   (United States)

Author keywords

2D crystals; benchmarking; layered materials; steep slope; subthreshold swing; transport model; Tunnel FET

Indexed keywords

BENCHMARKING; CHARGE TRANSFER; CRYSTALS; ENERGY UTILIZATION; HETEROJUNCTIONS; INTERFACE STATES; TRANSISTORS; VAN DER WAALS FORCES;

2-D CRYSTALS; LAYERED MATERIAL; STEEP SLOPE; SUBTHRESHOLD SWING; TRANSPORT MODELING; TUNNEL FET;

TUNNEL FIELD EFFECT TRANSISTORS;

EID: 84928605569     PISSN: None     EISSN: 21686734     Source Type: Journal    
DOI: 10.1109/JEDS.2015.2390643     Document Type: Article

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