High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·μm) and record high drain current (460 μa/μm)

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2014, Pages

  Yang, Lingming ^a   Majumdar, Kausik ^b   Du, Yuchen ^a   Liu, Han ^a   Wu, Heng ^a   Hatzistergos, Michael ^c   Hung, P Y ^b   Tieckelmann, Robert ^b   Tsai, Wilman ^d   Hobbs, Chris ^b   Ye, Peide D ^a  

^a PURDUE UNIVERSITY   (United States)

^b SEMATECH   (United States)

^c SUNY POLYTECHNIC INSTITUTE   (United States)

^d INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE COMPOUNDS; CONTACT RESISTANCE; DRAIN CURRENT; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSITION METALS;

1 ,2-DICHLOROETHANES; CHEMICAL DOPING; CHLORIDE DOPING; CONTROL SAMPLES; FIELD EFFECT TRANSISTOR (FETS); ORDERS OF MAGNITUDE; SPECIFIC CONTACT RESISTIVITY; TRANSITION METAL DICHALCOGENIDES;

FIELD EFFECT TRANSISTORS;

EID: 84907689916     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2014.6894432     Document Type: Conference Paper

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