Using dimensionality to achieve a sharp tunneling FET (TFET) turn-on

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2011, Pages 199-200

  Agarwal, Sapan ^a   Yablonovitch, Eli ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF STATE; GATE VOLTAGES; LOW VOLTAGES; OPERATING VOLTAGE; P-N JUNCTION; REDUCED POWER CONSUMPTION; STEP FUNCTIONS; TUNNELING FET (TFET);

EID: 84880747583     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2011.5994496     Document Type: Conference Paper

References (2)

1. Knoch, et al., Solid-State Electronics, vol. 51, pp. 572-578, Apr 2007.
2. W. A. Harrison, Physical Review, vol. 123, pp. 85-89, 1 July 1961.