Lateral transport in two-dimensional heterojunction interlayer tunneling field effect transistor (Thin-TFET)

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2014, Pages 17-18

  Li, Mingda Oscar ^a   Esseni, David ^b   Jena, Debdeep ^a   Xing, Huili Grace ^a  

^a UNIVERSITY OF NOTRE DAME   (United States)

^b UNIVERSITY OF UDINE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

D REGION; HETEROJUNCTIONS;

2D LAYER; AREA DENSITY; LATERAL TRANSPORT; ON-CURRENTS; SINGLE-PARTICLE MODEL; STEEP SUBTHRESHOLD SWINGS; SUB-THRESHOLD SWING(SS); TUNNELING FIELD-EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 84906535026     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2014.6872278     Document Type: Conference Paper

References (3)

1. M.Li et al. J. of Applied Physics, 115, 074508 (2014).
2. S.M.Sze et al. John Wiley & Sons, (2006).
3. J.Nocedal et al. Springer-Verlag, (2006).