Quantum hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

Nature Communications

Volumn 6, Issue , 2015, Pages

  Lafont, F ^a   Ribeiro Palau, R ^a   Kazazis, D ^b   Michon, A ^b   Couturaud, O ^c   Consejo, C ^c   Chassagne, T ^d   Zielinski, M ^d   Portail, M ^b   Jouault, B ^c   Schopfer, F ^a   Poirier, W ^a  

^a LABORATOIRE NATIONAL DE MÉTROLOGIE ET D ESSAIS LNE   (France)

^b CNRS   (France)

^c UNIV MONTPELLIER   (France)

^d SAVOIE TECHNOLAC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE; SILICON CARBIDE;

ELECTRON DENSITY; MAGNETIC FIELD; QUANTUM MECHANICS; SILICON; VAPORIZATION;

ACCURACY; ARTICLE; MAGNETIC FIELD; QUANTUM CHEMISTRY; STANDARD; VAPOR;

EID: 84928139360     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms7806     Document Type: Article

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