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Volumn 96, Issue 1, 2004, Pages 404-410

Behavior of the contacts of quantum hall effect devices at high currents

Author keywords

[No Author keywords available]

Indexed keywords

COOLING; ELECTRIC CURRENT MEASUREMENT; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRON GAS; ELECTRON MOBILITY; ELECTRON TRANSITIONS; HALL EFFECT; HELIUM; OHMIC CONTACTS; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 3142706599     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1748853     Document Type: Article
Times cited : (13)

References (44)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.