Precision quantization of Hall resistance in transferred graphene

Applied Physics Letters

Volumn 100, Issue 16, 2012, Pages

  Woszczyna, M ^a   Friedemann, M ^a   Gotz M ^a   Pesel, E ^a   Pierz, K ^a   Weimann, T ^a   Ahlers, F J ^a  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT LEVELS; CURRENT REFERENCE; EPITAXIALLY GROWN; GAAS; GRAPHENE DEVICES; HALL RESISTANCE; HIGH QUALITY; QUANTUM RESISTANCE;

CHEMICAL VAPOR DEPOSITION;

GRAPHENE;

EID: 84860014034     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4704190     Document Type: Article

References (17)

1. D. C. Tsui and A. C. Gossard, Appl. Phys. Lett., 38, 550 (1981). 10.1063/1.92408
2. S. Das Sarma, S. Adam, E. Hwang, and E. Rossi, Rev. Mod. Phys. 83, 407 (2011). 10.1103/RevModPhys.83.407
3. K. S. Novoselov, Z. Jiang, Y. Zhang, S. V. Morozov, H. L. Stormer, U. Zeitler, J. C. Maan, G. S. Boebinger, P. Kim, and A. K. Geim, Science 315, 1379 (2007). 10.1126/science.1137201
4. J. I. Giem, IEEE Trans. Instrum. Meas. 40, 329 (1991). 10.1109/TIM.1990.1032951
5. H. Yoshida, F. Katada, Y. Sakamoto, A. Iwasa, and T. Endo, Jpn. J. Appl. Phys., Part 1 32, 3643 (1993). 10.1143/JJAP.32.3643
6. A. Tzalenchuk, S. Lara-Avila, A. Kalaboukhov, S. Paolillo, M. Syvjrvi, R. Yakimova, O. Kazakova, T. J. B. M. Janssen, V. Falko, and S. A. Kubatkin, Nat. Nanotechnol. 5, 186 (2010). 10.1038/nnano.2009.474
7. T. J. B. M. Janssen, N. E. Fletcher, R. Goebel, J. M. Williams, A. Tzalenchuk, R. Yakimova, S. Kubatkin, S. Lara-Avila, and V. I. Falko, New J. Phys. 13, 093026 (2011). 10.1088/1367-2630/13/9/093026
8. A. K. Geim and P. Kim, Sci. Am. 298, 90-97 (2008). 10.1038/ scientificamerican0408-90
9. A. J. M. Giesbers, G. Rietveld, E. Houtzager, U. Zeitler, R. Yang, K. S. Novoselov, A. K. Geim, and J. C. Maan, Appl. Phys. Lett. 93, 222109 (2008). 10.1063/1.3043426
10. J. Guignard, D. Leprat, D. C. Glattli, F. Schopfer, and W. Poirier, Phys. Rev. B 85, 165420 (2012). 10.1103/PhysRevB.85.165420
11. M. Woszczyna, M. Friedemann, K. Pierz, T. Weimann, and F. J. Ahlers, J. Appl. Phys. 110, 043712 (2011). 10.1063/1.3624611
12. M. Friedemann, K. Pierz, R. Stosch, and F. J. Ahlers, Appl. Phys. Lett. 95, 102103 (2009). 10.1063/1.3224910
13. A. M. R. Baker, J. A. Alexander-Webber, T. Altebaeumer, and R. J. Nicholas, Phys. Rev. B 85, 115403 (2012). 10.1103/PhysRevB.85.115403
14. M. Gtz, D. Drung, E. Pesel, H. Barthelmess, C. Hinnrichs, C. Amann, M. Peters, H. Scherer, B. Schumacher, and T. Schurig, IEEE Trans. Instrum. Meas, 58, 1176 (2009). 10.1109/TIM.2008.2012379
15. T. J. B. M. Janssen, A. Tzalenchuk, R. Yakimova, S. Kubatkin, S. Lara-Avila, S. Kopylov, and V. I. Fal'ko, Phys. Rev. B 83, 233402 (2011). 10.1103/PhysRevB.83.233402
16. C. R. Dean, A. F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. L. Shepard, Nat. Nanotechnol. 5, 722 (2010). 10.1038/nnano.2010.172
17. T. Shen, W. Wei, Y. Qingkai, C. A. Richter, R. Elmquist, D. Newell, and Y. P. Chen, Appl. Phys. Lett. 99, 232110 (2011). 10.1063/1.3663972