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Applied Physics Letters

Volumn 97, Issue 17, 2010, Pages

Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

(6) Michon, A a Vzian S a Ouerghi, A b Zielinski, M c Chassagne, T c Portail, M a

a CRHEA CNRS (France)

b UNIV PARIS SUD (France)

c SAVOIE TECHNOLAC (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING METHODS; CHEMICAL VAPOR DEPOSITION REACTORS; DIRECT GROWTH; GROWTH SEQUENCES; LARGE-SCALE PRODUCTION; ROTATIONAL DISORDER; SILICON SUBSTRATES; X-RAY PHOTOEMISSIONS;

CHEMICAL VAPOR DEPOSITION; PROPANE; SILICON CARBIDE;

GRAPHENE;

EID: 78149459479 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3503972 Document Type: Article

Times cited : (75)

References (26)

1
- 7444220645
- Electric field in atomically thin carbon films
- DOI 10.1126/science.1102896
- K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Yiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science SCIEAS 0036-8075 306, 666 (2004). 10.1126/science.1102896 (Pubitemid 39440910)
- (2004) Science , vol.306 , Issue.5696 , pp. 666-669
- Novoselov, K.S.¹ Geim, A.K.² Morozov, S.V.³ Jiang, D.⁴ Zhang, Y.⁵ Dubonos, S.V.⁶ Grigorieva, I.V.⁷ Firsov, A.A.⁸

2
- 33847690144
- The rise of graphene
- DOI 10.1038/nmat1849, PII NMAT1849
- A. K. Geim and K. S. Novoselov, Nature Mater. NMAACR 1476-1122 6, 183 (2007). 10.1038/nmat1849 (Pubitemid 46353764)
- (2007) Nature Materials , vol.6 , Issue.3 , pp. 183-191
- Geim, A.K.¹ Novoselov, K.S.²

3
- 0001407335
- PLRBAQ 0556-2805,. 10.1103/PhysRevB.58.16396
- I. Forbeaux, J. -M. Themlin, and J. -M. Debever, Phys. Rev. B PLRBAQ 0556-2805 58, 16396 (1998). 10.1103/PhysRevB.58.16396
- (1998) Phys. Rev. B , vol.58 , pp. 16396
- Forbeaux, I.¹ Themlin, J.-M.² Debever, J.-M.³

4
- 33744469329
- Electronic confinement and coherence in patterned epitaxial graphene
- DOI 10.1126/science.1125925
- C. Berger, Z. Song, X. Li, X. Wu, N. Brown, C. Naud, D. Mayou, T. Li, J. Hass, A. N. Marchenkov, E. H. Conrad, P. N. First, and W. A. de Heer, Science SCIEAS 0036-8075 312, 1191 (2006). 10.1126/science.1125925 (Pubitemid 43801140)
- (2006) Science , vol.312 , Issue.5777 , pp. 1191-1196
- Berger, C.¹ Song, Z.² Li, X.³ Wu, X.⁴ Brown, N.⁵ Naud, C.⁶ Mayou, D.⁷ Li, T.⁸ Hass, J.⁹ Marchenkov, A.N.¹⁰ Conrad, E.H.¹¹ First, P.N.¹² De Heer, W.A.¹³

5
- 60349104063
- PLRBAQ 0556-2805,. 10.1103/PhysRevB.79.033408
- J. Penuelas, A. Ouerghi, D. Lucot, C. David, J. Gierak, H. Estrade-Szwarckopf, and C. Andreazza-Vignolle, Phys. Rev. B PLRBAQ 0556-2805 79, 033408 (2009). 10.1103/PhysRevB.79.033408
- (2009) Phys. Rev. B , vol.79 , pp. 033408
- Penuelas, J.¹ Ouerghi, A.² Lucot, D.³ David, C.⁴ Gierak, J.⁵ Estrade-Szwarckopf, H.⁶ Andreazza-Vignolle, C.⁷

6
- 77953584605
- APPLAB 0003-6951,. 10.1063/1.3442903
- J. L. Tedesco, G. G. Jernigan, J. C. Culbertson, J. K. Hite, Y. Yang, K. M. Daniels, R. L. Myers-Ward, C. R. Eddy, Jr., J. A. Robinson, K. A. Trumbull, M. T. Wetherington, P. M. Campbell, and D. K. Gaskill, Appl. Phys. Lett. APPLAB 0003-6951 96, 222103 (2010). 10.1063/1.3442903
- (2010) Appl. Phys. Lett. , vol.96 , pp. 222103
- Tedesco, J.L.¹ Jernigan, G.G.² Culbertson, J.C.³ Hite, J.K.⁴ Yang, Y.⁵ Daniels, K.M.⁶ Myers-Ward, R.L.⁷ Eddy, Jr.C.R.⁸ Robinson, J.A.⁹ Trumbull, K.A.¹⁰ Wetherington, M.T.¹¹ Campbell, P.M.¹² Gaskill, D.K.¹³

7
- 60749097071
- NMAACR 1476-1122,. 10.1038/nmat2382
- K. V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G. L. Kellogg, L. Ley, J. L. McChesney, T. Ohta, S. A. Reshanov, J. Röhrl, E. Rotenberg, A. K. Schmid, D. Waldmann, H. B. Weber, and T. Seyller, Nature Mater. NMAACR 1476-1122 8, 203 (2009). 10.1038/nmat2382
- (2009) Nature Mater. , vol.8 , pp. 203
- Emtsev, K.V.¹ Bostwick, A.² Horn, K.³ Jobst, J.⁴ Kellogg, G.L.⁵ Ley, L.⁶ McChesney, J.L.⁷ Ohta, T.⁸ Reshanov, S.A.⁹ Röhrl, J.¹⁰ Rotenberg, E.¹¹ Schmid, A.K.¹² Waldmann, D.¹³ Weber, H.B.¹⁴ Seyller, T.¹⁵

8
- 41549140434
- Why multilayer graphene on 4H-SiC(0001) behaves like a single sheet of graphene
- DOI 10.1103/PhysRevLett.100.125504
- J. Hass, F. Varchon, J. E. Millán-Otoya, M. Sprinkle, N. Sharma, W. A. de Heer, C. Berger, P. N. First, L. Magaud, and E. H. Conrad, Phys. Rev. Lett. PRLTAO 0031-9007 100, 125504 (2008). 10.1103/PhysRevLett.100.125504 (Pubitemid 351469004)
- (2008) Physical Review Letters , vol.100 , Issue.12 , pp. 125504
- Hass, J.¹ Varchon, F.² Millan-Otoya, J.E.³ Sprinkle, M.⁴ Sharma, N.⁵ De Heer, W.A.⁶ Berger, C.⁷ First, P.N.⁸ Magaud, L.⁹ Conrad, E.H.¹⁰

9
- 70349653537
- APPLAB 0003-6951,. 10.1063/1.3224887
- J. L. Tedesco, B. L. VanMil, R. L. Myers-Ward, J. M. McCrate, S. A. Kitt, P. M. Campbell, G. G. Jernigan, J. C. Culbertson, C. R. Eddy, Jr., and D. K. Gaskill, Appl. Phys. Lett. APPLAB 0003-6951 95, 122102 (2009). 10.1063/1.3224887
- (2009) Appl. Phys. Lett. , vol.95 , pp. 122102
- Tedesco, J.L.¹ Vanmil, B.L.² Myers-Ward, R.L.³ McCrate, J.M.⁴ Kitt, S.A.⁵ Campbell, P.M.⁶ Jernigan, G.G.⁷ Culbertson, J.C.⁸ Eddy, Jr.C.R.⁹ Gaskill, D.K.¹⁰

10
- 77953000656
- APPLAB 0003-6951,. 10.1063/1.3427406
- A. Ouerghi, A. Kahouli, D. Lucot, M. Portail, L. Travers, J. Gierak, J. Penuelas, P. Jegou, A. Shukla, T. Chassagne, and M. Zielinski, Appl. Phys. Lett. APPLAB 0003-6951 96, 191910 (2010). 10.1063/1.3427406
- (2010) Appl. Phys. Lett. , vol.96 , pp. 191910
- Ouerghi, A.¹ Kahouli, A.² Lucot, D.³ Portail, M.⁴ Travers, L.⁵ Gierak, J.⁶ Penuelas, J.⁷ Jegou, P.⁸ Shukla, A.⁹ Chassagne, T.¹⁰ Zielinski, M.¹¹

11
- 77949426482
- NALEFD 1530-6984,. 10.1021/nl904115h
- V. Y. Aristov, G. Urbanik, K. Kummer, D. V. Vyalikh, O. V. Molodtsova, A. B. Preobrajenski, A. A. Zakharov, C. Hess, T. Hänke, B. Büchner, I. Vobornik, J. Fujii, G. Panaccione, Y. A. Ossipyan, and M. Knupfer, Nano Lett. NALEFD 1530-6984 10, 992 (2010). 10.1021/nl904115h
- (2010) Nano Lett. , vol.10 , pp. 992
- Aristov, V.Y.¹ Urbanik, G.² Kummer, K.³ Vyalikh, D.V.⁴ Molodtsova, O.V.⁵ Preobrajenski, A.B.⁶ Zakharov, A.A.⁷ Hess, C.⁸ Hänke, T.⁹ Büchner, B.¹⁰ Vobornik, I.¹¹ Fujii, J.¹² Panaccione, G.¹³ Ossipyan, Y.A.¹⁴ Knupfer, M.¹⁵

12
- 78149455618
- (unpublished).
- M. Portail, A. Ouerghi, A. Michon, S. V́zian, J. C. Arnault, S. Saada, S. Delclos, P. Jegou, T. Chassagne, and M. Zielinski, " Investigation of the graphitization mechanism on (111) and (100) 3C-SiC/Si epilayers. " (unpublished).
- Investigation of the Graphitization Mechanism on (111) and (100) 3C-SiC/Si Epilayers
- Portail, M.¹ Ouerghi, A.² Michon, A.³ V́zian, S.⁴ Arnault, J.C.⁵ Saada, S.⁶ Delclos, S.⁷ Jegou, P.⁸ Chassagne, T.⁹ Zielinski, M.¹⁰

13
- 76949102392
- PSSABA 0031-8965,. 10.1002/pssa.200982412
- E. Moreau, F. J. Ferrer, D. Vignaud, S. Godey, and X. Wallart, Phys. Status Solidi A PSSABA 0031-8965 207, 300 (2009). 10.1002/pssa.200982412
- (2009) Phys. Status Solidi A , vol.207 , pp. 300
- Moreau, E.¹ Ferrer, F.J.² Vignaud, D.³ Godey, S.⁴ Wallart, X.⁵

14
- 71949097444
- APPLAB 0003-6951,. 10.1063/1.3265916
- A. Al-Temimy, C. Riedl, and U. Starke, Appl. Phys. Lett. APPLAB 0003-6951 95, 231907 (2010). 10.1063/1.3265916
- (2010) Appl. Phys. Lett. , vol.95 , pp. 231907
- Al-Temimy, A.¹ Riedl, C.² Starke, U.³

15
- 0000133288
- MSFOEP 0255-5476,. 10.4028/www.scientific.net/MSF.338-342.241
- A. Leycuras, Mater. Sci. Forum MSFOEP 0255-5476 338-342, 241 (2000). 10.4028/www.scientific.net/MSF.338-342.241
- (2000) Mater. Sci. Forum , vol.338-342 , pp. 241
- Leycuras, A.¹

16
- 78149452533
- For substrates specifications, see.
- For substrates specifications, see http://www.tankeblue.com.

17
- 33747502586
- APPLAB 0003-6951,. 10.1063/1.93970
- S. Nishino, H. Suhara, H. Ono, and H. Matsunami, Appl. Phys. Lett. APPLAB 0003-6951 42, 460 (1983). 10.1063/1.93970
- (1983) Appl. Phys. Lett. , vol.42 , pp. 460
- Nishino, S.¹ Suhara, H.² Ono, H.³ Matsunami, H.⁴

18
- 41549157259
- PLRBAQ 0556-2805,. 10.1103/PhysRevB.77.155303
- K. V. Emtsev, F. Speck, Th. Seyller, L. Ley, and J. D. Riley, Phys. Rev. B PLRBAQ 0556-2805 77, 155303 (2008). 10.1103/PhysRevB.77.155303
- (2008) Phys. Rev. B , vol.77 , pp. 155303
- Emtsev, K.V.¹ Speck, F.² Seyller, Th.³ Ley, L.⁴ Riley, J.D.⁵

19
- 33749126038
- Structural and electronic properties of graphite layers grown on SiC(0 0 0 1)
- DOI 10.1016/j.susc.2006.01.102, PII S0039602806004237
- Th. Seyller, K. V. Emtsev, K. Gao, F. Speck L. Ley, A. Tadich, L. Broekman, J. D. Riley, R. C. G. Leckey, O. Rader, A. Varykhalov, and A. M. Shikin, Surf. Sci. SUSCAS 0039-6028 600, 3906 (2006). 10.1016/j.susc.2006.01.102 (Pubitemid 44467922)
- (2006) Surface Science , vol.600 , Issue.18 , pp. 3906-3911
- Seyller, Th.¹ Emtsev, K.V.² Gao, K.³ Speck, F.⁴ Ley, L.⁵ Tadich, A.⁶ Broekman, L.⁷ Riley, J.D.⁸ Leckey, R.C.G.⁹ Rader, O.¹⁰ Varykhalov, A.¹¹ Shikin, A.M.¹²

20
- 69249187562
- APPLAB 0003-6951,. 10.1063/1.3207757
- K. Luxmi, P. J. Fisher, N. Srivastava, R. M. Feenstra, Y. Sun, J. Kedzierski, P. Healey, and G. Gu, Appl. Phys. Lett. APPLAB 0003-6951 95, 073101 (2009). 10.1063/1.3207757
- (2009) Appl. Phys. Lett. , vol.95 , pp. 073101
- Luxmi, K.¹ Fisher, P.J.² Srivastava, N.³ Feenstra, R.M.⁴ Sun, Y.⁵ Kedzierski, J.⁶ Healey, P.⁷ Gu, G.⁸

21
- 0001600271
- JESOAN 0013-4651,. 10.1149/1.2423742
- T. L. Chu and R. B. Campbell, J. Electrochem. Soc. JESOAN 0013-4651 112, 955 (1965). 10.1149/1.2423742
- (1965) J. Electrochem. Soc. , vol.112 , pp. 955
- Chu, T.L.¹ Campbell, R.B.²

22
- 20944449416
- 2 etching
- DOI 10.1063/1.1901838, 104919
- A. Nakajima, H. Yokoya, Y. Furukawa, and H. Yonezu, J. Appl. Phys. JAPIAU 0021-8979 97, 104919 (2005). 10.1063/1.1901838 (Pubitemid 40866171)
- (2005) Journal of Applied Physics , vol.97 , Issue.10 , pp. 1-5
- Nakajima, A.¹ Yokoya, H.² Furukawa, Y.³ Yonezu, H.⁴

23
- 0034229368
- JCRGAE 0022-0248,. 10.1016/S0022-0248(00)00480-2
- Z. Y. Xie, C. H. Wei, L. Y. Li, Q. M. Yu, and J. H. Edgar, J. Cryst. Growth JCRGAE 0022-0248 217, 115 (2000). 10.1016/S0022-0248(00)00480-2
- (2000) J. Cryst. Growth , vol.217 , pp. 115
- Xie, Z.Y.¹ Wei, C.H.² Li, L.Y.³ Yu, Q.M.⁴ Edgar, J.H.⁵

24
- 58549120936
- JCRGAE 0022-0248,. 10.1016/j.jcrysgro.2008.11.030
- B. L. VanMil, K. -K. Lew, R. L. Myers-Ward, R. T. Holm, D. K. Gaskill, C. R. Eddy, Jr., L. Wang, and P. Zhao, J. Cryst. Growth JCRGAE 0022-0248 311, 238 (2009). 10.1016/j.jcrysgro.2008.11.030
- (2009) J. Cryst. Growth , vol.311 , pp. 238
- Vanmil, B.L.¹ Lew, K.-K.² Myers-Ward, R.L.³ Holm, R.T.⁴ Gaskill, D.K.⁵ Eddy, Jr.C.R.⁶ Wang, L.⁷ Zhao, P.⁸

25
- 0030262788
- JCRGAE 0022-0248,. 10.1016/0022-0248(96)00293-X
- A. A. Burk and L. B. Rowland, J. Cryst. Growth JCRGAE 0022-0248 167, 586 (1996). 10.1016/0022-0248(96)00293-X
- (1996) J. Cryst. Growth , vol.167 , pp. 586
- Burk, A.A.¹ Rowland, L.B.²

26
- 72049105359
- PRLTAO 0031-9007,. 10.1103/PhysRevLett.103.246804
- C. Riedl, C. Coletti, T. Iwasaki, A. A. Zakharov, and U. Starke, Phys. Rev. Lett. PRLTAO 0031-9007 103, 246804 (2009). 10.1103/PhysRevLett.103.246804
- (2009) Phys. Rev. Lett. , vol.103 , pp. 246804
- Riedl, C.¹ Coletti, C.² Iwasaki, T.³ Zakharov, A.A.⁴ Starke, U.⁵

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