Precision comparison of the quantum Hall effect in graphene and gallium arsenide

Metrologia

Volumn 49, Issue 3, 2012, Pages 294-306

  Janssen, T J B M ^a   Williams, J M ^a   Fletcher, N E ^b   Goebel, R ^b   Tzalenchuk, A ^a   Yakimova, R ^c   Lara Avila, S ^d   Kubatkin, S ^d   Fal'Ko, V I ^e  

^a NATIONAL PHYSICAL LABORATORY   (United Kingdom)

^b PAVILLON DE BRETEUIL   (France)

^c LINKÖPING UNIVERSITY   (Sweden)

^d CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^e LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CORRECTION TERMS; CRYOGENIC CURRENT COMPARATOR; ELECTRICAL RESISTANCES; EPITAXIAL GRAPHENE; GAAS/ALGAAS; HIGH PRECISION; METROLOGICAL QUALITY; RESISTANCE VALUES; STANDARD UNCERTAINTY; UNCERTAINTY BUDGET;

EPITAXIAL GROWTH; HALL EFFECT DEVICES; QUANTUM HALL EFFECT; QUANTUM THEORY;

GRAPHENE;

EID: 84859587249     PISSN: 00261394     EISSN: 16817575     Source Type: Journal    
DOI: 10.1088/0026-1394/49/3/294     Document Type: Article

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