Quantum hall effect and quantum point contact in bilayer-patched epitaxial graphene

Nano Letters

Volumn 14, Issue 6, 2014, Pages 3369-3373

  Chua, Cassandra ^a   Connolly, Malcolm ^a,b   Lartsev, Arseniy ^c   Yager, Tom ^c   Lara Avila, Samuel ^c   Kubatkin, Sergey ^c   Kopylov, S V ^d   Fal'Ko, Vladimir ^d   Yakimova, Rositza ^e   Pearce, Ruth ^b   Janssen, T J B M ^b   Tzalenchuk, Alexander ^b,f   Smith, Charles G ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b NATIONAL PHYSICAL LABORATORY   (United Kingdom)

^c CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^d LANCASTER UNIVERSITY   (United Kingdom)

^e LINKÖPING UNIVERSITY   (Sweden)

^f UNIVERSITY OF LONDON   (United Kingdom)

Author keywords

monolayer and bilayer graphene; quantum hall effect; quantum point contact; resistance metrology; scanning gate microscopy; SiC epitaxial graphene

Indexed keywords

HALL EFFECT DEVICES; MONOLAYERS; POINT CONTACTS; QUANTUM CHEMISTRY; QUANTUM HALL EFFECT; QUANTUM THEORY; SCANNING; SILICON CARBIDE;

BI-LAYER; BILAYER GRAPHENE; EDGE CURRENTS; EPITAXIAL GRAPHENE; LOW TEMPERATURES; MAGNETO-TRANSPORT MEASUREMENT; QUANTUM POINT CONTACT; SCANNING GATE MICROSCOPY;

GRAPHENE;

EID: 84902276837     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl5008757     Document Type: Article

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