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Volumn 85, Issue 23, 2012, Pages

Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces

Author keywords

[No Author keywords available]

Indexed keywords


EID: 84862221580     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.85.235402     Document Type: Article
Times cited : (47)

References (28)
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    • NALEFD 1530-6984 10.1021/nl102123c
    • M. Huang, H. Yan, T. F. Heinz, and J. Hone, Nano Lett. NALEFD 1530-6984 10.1021/nl102123c 10, 4074 (2010).
    • (2010) Nano Lett. , vol.10 , pp. 4074
    • Huang, M.1    Yan, H.2    Heinz, T.F.3    Hone, J.4
  • 21
    • 84855379723 scopus 로고    scopus 로고
    • PRBMDO 1098-0121 10.1103/PhysRevB.84.235422
    • D.A. Schmidt, T. Ohta, and T.E. Beechem, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.84.235422 84, 235422 (2011).
    • (2011) Phys. Rev. B , vol.84 , pp. 235422
    • Schmidt, D.A.1    Ohta, T.2    Beechem, T.E.3
  • 24
    • 77954830508 scopus 로고    scopus 로고
    • PRBMDO 1098-0121 10.1103/PhysRevB.81.041406
    • S. Tanaka, K. Morita, and H. Hibino, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.81.041406 81, 041406 (R) (2010).
    • (2010) Phys. Rev. B , vol.81 , pp. 041406
    • Tanaka, S.1    Morita, K.2    Hibino, H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.