Quantum Hall effect in bottom-gated epitaxial graphene grown on the C-face of SiC

Applied Physics Letters

Volumn 100, Issue 5, 2012, Pages

  Jouault, B ^a   Camara, N ^a,d   Jabakhanji, B ^a   Caboni, A ^b   Consejo, C ^a   Godignon, P ^b   Maude, D K ^c   Camassel, J ^a  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^c GRENOBLE HIGH MAGNETIC FIELD LABORATORY   (France)

^d UNIVERSITÉ DE TOURS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BURIED GATES; CHARGE NEUTRALITY; DIRAC POINT; EPITAXIAL GRAPHENE; GATE VOLTAGES; INTERFACE STATE; LOW TEMPERATURES; NITROGEN ATOM; QUANTUM HALL; QUANTUM HALL EFFECT; SIC SUBSTRATES;

EPITAXIAL GROWTH; SILICON CARBIDE;

GRAPHENE;

EID: 84856990394     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3680564     Document Type: Article

References (23)

1. P. W. Sutter, J. I. Flege, and E. A. Sutter, Nat. Mater. 7 (5), 406 (2008). 10.1038/nmat2166
2. J. Coraux, A. T. N'Diaye, C. Busse, and T. Michely, Nano Lett 8, 565 (2008). 10.1021/nl0728874
3. I. Forbeaux, J. M. Themlin, and J. M. Debever, Phys. Rev. B 58 (24), 16396 (1998); 10.1103/PhysRevB.58.16396
4. C. Berger, Z. M. Song, T. B. Li, X. B. Li, A. Y. Ogbazghi, R. Feng, Z. T. Dai, A. N. Marchenkov, E. H. Conrad, P. N. First, and W. A. de Heer, J. Phys. Chem. B 108 (52), 19912 (2004); 10.1021/jp040650f
5. W. A. de Heer, C. Berger, X. S. Wu, P. N. First, E. H. Conrad, X. B. Li, T. B. Li, M. Sprinkle, J. Hass, M. L. Sadowski, M. Potemski, and G. Martinez, Solid State Commun. 143 (1-2), 92 (2007); 10.1016/j.ssc.2007.04.023
6. J. Kedzierski, P. L. Hsu, P. Healey, P. W. Wyatt, C. L. Keast, M. Sprinkle, C. Berger, and W. A. de Heer, IEEE Trans. Electron Devices 55 (8), 2078 (2008). 10.1109/TED.2008.926593
7. S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino, Appl. Phys. Express 3 (7), 075102 (2010); 10.1143/APEX.3.075102
8. J. S. Moon, D. Curtis, S. Bui, M. Hu, D. K. Gaskill, J. L. Tedesco, P. Asbeck, G. G. Jernigan, B. L. VanMil, R. L. Myers-Ward, C. R. Eddy, P. M. Campbell, and X. Weng, IEEE Electron Device Lett. 31 (4), 260 (2010). 10.1109/LED.2010.2040132
9. X. B. Li, X. S. Wu, M. Sprinkle, F. Ming, M. Ruan, Y. K. Hu, C. Berger, and W. A. de Heer, Phys. Status Solidi A 207 (2), 286 (2010); 10.1002/pssa.200982453
10. T. Shen, J. J. Gu, M. Xu, Y. Q. Wu, M. L. Bolen, M. A. Capano, L. W. Engel, and P. D. Ye, Appl. Phys. Lett. 95 (17), 172105 (2009). 10.1063/1.3254329
11. Y. Y. Shao, J. Wang, H. Wu, J. Liu, I. A. Aksay, and Y. H. Lin, Electroanalysis 22 (10), 1027 (2010).
12. I. Deretzis and A. La Magna, Appl. Phys. Lett. 98 (2), 023113 (2011). 10.1063/1.3543847
13. D. Waldmann, J. Jobst, F. Speck, T. Seyller, M. Krieger, and H. B. Weber, Nat. Mater. 10 (5), 357 (2011). 10.1038/nmat2988
14. N. Camara, J. R. Huntzinger, G. Rius, A. Tiberj, N. Mestres, F. Perez-Murano, P. Godignon, and J. Camassel, Phys. Rev. B 80 (12), 125410 (2009). 10.1103/PhysRevB.80.125410
15. N. Camara, B. Jouault, A. Caboni, B. Jabakhanji, W. Desrat, E. Pausas, C. Consejo, N. Mestres, P. Godignon, and J. Camassel, Appl. Phys. Lett. 97 (9), 093107 (2010). 10.1063/1.3480610
16. N. Camara, J.-R. Huntzinger, G. Rius, A. Tiberj, N. Mestres, F. Perez-Murano, P. Godignon, and J. Camassel, Phys. Rev. B 80 (12), 125410 (2009). 10.1103/PhysRevB.80.125410
17. B. Jouault, B. Jabakhanji, N. Camara, W. Desrat, C. Consejo, and J. Camassel, Phys. Rev. B 83 (19), 195417 (2011). 10.1103/PhysRevB.83.195417
18. S. Wiedmann, H. J. van Elferen, E. V. Kurganova, M. I. Katsnelson, A. J. M. Giesbers, A. Veligura, B. J. van Wees, R. V. Gorbachev, K. S. Novoselov, J. C. Maan, and U. Zeitler, Phys. Rev. B 84 (11), 115314 (2011). 10.1103/PhysRevB.84.115314
19. S. D. Sarma, S. Adam, E. H. Hwang, and E. Rossi, Rev. Mod. Phys. 83 (2), 407 (2011). 10.1103/RevModPhys.83.407
20. L. Magaud, F. Hiebel, F. Varchon, P. Mallet, and J. Y. Veuillen, Phys. Rev. B 79 (16), 161405 (2009). 10.1103/PhysRevB.79.161405
21. T. J. B. M. Janssen, A. Tzalenchuk, R. Yakimova, S. Kubatkin, S. Lara-Avila, S. Kopylov, and V. I. Fal'ko, Phys. Rev. B 83 (23), 121401 (2011). 10.1103/PhysRevB.83.233402
22. J. M. Poumirol, W. Escoffier, A. Kumar, B. Raquet, and M. Goiran, Phys. Rev. B 82 (12), 121401(R) (2010). 10.1103/PhysRevB.82.121401
23. W. Poirier and F. Schopfer, Nat. Nanotechnol. 5 (3), 171 (2010). 10.1038/nnano.2010.40