Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

Journal of Applied Physics

Volumn 113, Issue 20, 2013, Pages

  Michon, A ^a   Vezian S ^a   Roudon, E ^a   Lefebvre, D ^a   Zielinski, M ^b   Chassagne, T ^b   Portail, M ^a  

^a CRHEA CNRS   (France)

^b SAVOIE TECHNOLAC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRONS; GRAPHENE; PROPANE; SCANNING TUNNELING MICROSCOPY; SILICON; SILICON CARBIDE; SILICON COMPOUNDS;

CHEMICAL VAPOR DEPOSITIONS (CVD); DIFFERENT STRUCTURE; GROWTH CONDITIONS; GROWTH MECHANISMS; PRESSURE AND TEMPERATURE; ROTATIONAL DISORDER; TEMPERATURE DIAGRAM; X-RAY PHOTOEMISSIONS;

CHEMICAL VAPOR DEPOSITION;

EID: 84879089938     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4806998     Document Type: Article

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