Non-volatile photochemical gating of an epitaxial graphene/polymer heterostructure

Advanced Materials

Volumn 23, Issue 7, 2011, Pages 878-882

  Lara Avila, Samuel ^a   Moth Poulsen, Kasper ^b   Yakimova, Rositza ^c   Bjaßrnholm, Thomas ^d   Fal'Ko, Vladimir ^e   Tzalenchuk, Alexander ^f   Kubatkin, Sergey ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c LINKÖPING UNIVERSITY   (Sweden)

^d UNIVERSITY OF COPENHAGEN   (Denmark)

^e LANCASTER UNIVERSITY   (United Kingdom)

^f NATIONAL PHYSICAL LABORATORY   (United Kingdom)

Author keywords

charge transport; electro optical materials; electronic structures; graphene nanodevices; graphene nanostructures

Indexed keywords

CHARGE TRANSPORT; ELECTRICAL PARAMETER; ELECTRON ACCEPTOR; EPITAXIAL GRAPHENE; HETEROSTRUCTURES; NON-INVASIVE; NON-VOLATILE; PHOTOACTIVE LAYERS; UV EXPOSURE; UV LIGHT;

ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; OPTICAL MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

GRAPHENE;

GRAPHITE; POLYMER;

ARTICLE; CHEMISTRY; PHOTOCHEMISTRY; RADIATION EXPOSURE; ULTRAVIOLET RADIATION; VOLATILIZATION;

GRAPHITE; PHOTOCHEMICAL PROCESSES; POLYMERS; ULTRAVIOLET RAYS; VOLATILIZATION;

EID: 79951750740     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201003993     Document Type: Article

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