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Volumn 13, Issue , 2011, Pages

Graphene, universality of the quantum Hall effect and redefinition of the SI system

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GRAPHENE; FUNDAMENTAL CONSTANTS; GAAS/ALGAAS HETEROSTRUCTURES; QUANTUM HALL EFFECT; RESISTANCE VALUES; STANDARD UNCERTAINTY; STRINGENT TEST;

EID: 80053416792     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/13/9/093026     Document Type: Article
Times cited : (76)

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    • Hehl F W, Obukhov Y N and Rosenow B 2004 Is the quantum Hall effect influenced by the gravitational field? Phys. Rev. Lett. 93 096804-8
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    • Hehl, F.W.1    Obukhov, Y.N.2    Rosenow, B.3
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    • Mohr P J, Taylor B N and Newell D B 2008 CODATA recommended values of the fundamental physical constants: 2006 Rev. Mod. Phys. 80 633-730
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    • Mohr, P.J.1    Taylor, B.N.2    Newell, D.B.3
  • 8
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    • Quantum resistance metrology in graphene
    • Giesbers A J M et al 2008 Quantum resistance metrology in graphene Appl. Phys. Lett. 93 222109-12
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  • 9
    • 77949267645 scopus 로고    scopus 로고
    • Towards a quantum resistance standard based on epitaxial graphene
    • Tzalenchuk A et al 2010 Towards a quantum resistance standard based on epitaxial graphene Nat. Nanotechnol. 5 186-9
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  • 10
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    • Anomalously strong pinning of the filling factor v= 2 in epitaxial graphene
    • Janssen T J B M et al 2011 Anomalously strong pinning of the filling factor v= 2 in epitaxial graphene Phys. Rev. B 83 233402-6
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.