Reliable control of filament formation in resistive memories by self-assembled nanoinsulators derived from a block copolymer

ACS Nano

Volumn 8, Issue 9, 2014, Pages 9492-9502

  You, Byoung Kuk ^a   Park, Woon Ik ^a   Kim, Jong Min ^a   Park, Kwi Il ^a   Seo, Hyeon Kook ^a,b   Lee, Jeong Yong ^a,b   Jung, Yeon Sik ^a   Lee, Keon Jae ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Institute for Basic Science   (South Korea)

Author keywords

block copolymers; conductive filament; resistive memory; self assembly

Indexed keywords

BLOCK COPOLYMERS; COPOLYMERS; ELECTRIC FIELDS; FINITE ELEMENT METHOD; METAL INSULATOR BOUNDARIES; NICKEL OXIDE; NONVOLATILE STORAGE; SELF ASSEMBLY;

CONDUCTIVE FILAMENTS; ELECTRO-THERMAL SIMULATION; HIGH-RESISTANCE STATE; INNOVATIVE APPROACHES; METAL-INSULATOR-METAL STRUCTURES; NON-VOLATILE MEMORY; RESISTIVE MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RERAM);

RANDOM ACCESS STORAGE;

EID: 84925651377     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn503713f     Document Type: Article

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