A path to ultranarrow patterns using self-assembled lithography

Nano Letters

Volumn 10, Issue 3, 2010, Pages 1000-1005

  Jung, Yeon Sik ^a,c   Chang, J B ^a   Verploegen, Eric ^a   Berggren, Karl K ^b   Ross, C A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b USA   (United States)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Block copolymer; Nanowire; Poly(dimethylsiloxane); Self assembly; Solvent anneal

Indexed keywords

DIBLOCK COPOLYMER; FEATURE SIZES; GRATING PATTERNS; PATTERN GEOMETRY; PATTERN TRANSFERS; POLY(STYRENE-B-DIMETHYLSILOXANE); REACTIVE ION; REGULAR ARRAY; SELF-ASSEMBLED; SELF-ASSEMBLED PATTERNS; SMALL FEATURES; TEMPLATED; TEMPLATING METHOD;

BLOCK COPOLYMERS; COPOLYMERIZATION; LITHOGRAPHY; NANOWIRES; PHOTORESISTS; SELF ASSEMBLY; SILICONES; SOLVENTS; STYRENE; TUNGSTEN;

REACTIVE ION ETCHING;

DIMETICONE; NANOMATERIAL; NYLON; POLY(DIMETHYLSILOXANE) POLYAMIDE COPOLYMER; POLY(DIMETHYLSILOXANE)-POLYAMIDE COPOLYMER; POLYSTYRENE DERIVATIVE; TUNGSTEN;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; DIMETHYLPOLYSILOXANES; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; NYLONS; PARTICLE SIZE; POLYSTYRENES; SURFACE PROPERTIES; TUNGSTEN;

EID: 77949474566     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl904141r     Document Type: Article

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