In Situ TEM Imaging of Defect Dynamics under Electrical Bias in Resistive Switching Rutile-TiO2

Microscopy and Microanalysis

Volumn 21, Issue 1, 2015, Pages 140-153

  Kamaladasa, Ranga J ^a   Sharma, Abhishek A ^a   Lai, Yu Ting ^a   Chen, Wenhao ^a   Salvador, Paul A ^a   Bain, James A ^a   Skowronski, Marek ^a   Picard, Yoosuf N ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

in situ; resistive switching; TEM; TiO2; Wadsley defects

Indexed keywords

EID: 84925338812     PISSN: 14319276     EISSN: 14358115     Source Type: Journal    
DOI: 10.1017/S1431927614013555     Document Type: Article

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